IRFZ44NPBF

IRFZ44NPbF is an Infineon (International Rectifier) N-channel HEXFET power MOSFET in the TO-220 package — for high-current low-voltage systems: motor controllers, DC-DC synchronous rectification and load switches. It is a standard-drive device whose low on-resistance is specified at full gate enhancement, so it pairs with a proper gate driver rather than a logic output. Selection advice: against the higher-voltage IRF540N family it trades voltage headroom for much lower conduction loss when the bus stays in its class; the PbF suffix is the lead-free version, supplied in tubes. Parameters verified against Infineon documentation.

Discrete SemiconductorsN-channel power MOSFETTO-220

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MPN: IRFZ44NPBF
Manufacturer: Infineon Technologies
Family: N-channel power MOSFET
Package: TO-220
Manufacturer channel coverage: Checked by RFQ
Data last checked: Commercial check required
Required order checks: Suffix, package, date code, lot, source and traceability

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MANUFACTURER DATA REVIEW

Key technical specifications

Ordering-code highlights reviewed against official manufacturer documentation.

Function: N-channel HEXFET power MOSFET · TO-220 (TO-220AB outline)
Breakdown voltage: V(BR)DSS 55 V minimum · VGS = 0 V, ID = 250 µA (Static table)
On-resistance: RDS(on) 17.5 mΩ maximum · VGS = 10 V, ID = 25 A, pulse ≤ 400 µs, duty ≤ 2% (Static table)
Gate threshold: VGS(th) 2.0 V minimum / 4.0 V maximum · VDS = VGS, ID = 250 µA — a standard-drive part, not logic-level
Gate charge: Qg 63 nC maximum · ID = 25 A, VDS = 44 V, VGS = 10 V (Dynamic table); Ciss 1470 pF typical at VDS = 25 V, f = 1.0 MHz
Drain current: 49 A at TC = 25 °C and 35 A at TC = 100 °C, VGS = 10 V (Absolute maximum ratings); pulsed drain current 160 A
Body diode: VSD 1.3 V maximum · TJ = 25 °C, IS = 25 A, VGS = 0 V (Diode Characteristics); source current 49 A continuous
Absolute maximum ratings: PD 94 W at TC = 25 °C, VGS ±20 V and TJ/TSTG −55 °C to +175 °C are absolute-maximum figures (p. 1), not operating points
Thermal resistance: RθJC 1.5 °C/W maximum; RθJA 62 °C/W maximum (p. 1)
Manufacturer packing: Tube of 50 as the Standard Pack (p. 1) · Infineon’s parametric web page lists a different packing size — the data sheet governs

Source: Infineon IRFZ44NPbF data sheet (Rev. 2.1, 11 Aug 2026; predecessor document PD-94787B) · Absolute Maximum Ratings and Standard Pack (p. 1); Static, Dynamic and Diode tables (p. 2) · Reviewed 2026-10-31

Sourcing note

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Before you request a quote

Budget a full 10 V gate drive
The on-resistance and current figures are specified at VGS = 10 V and the threshold runs to 4.0 V maximum. A 5 V logic drive will not reach the tabulated RDS(on) — check the driver rail before selecting this part.
Take packing from the data sheet
The Standard Pack is a 50-piece tube per the current data sheet, whatever secondary listings say. State the tube quantity expectation in the RFQ so the offer matches.

Official documentation

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RELATED REFERENCES

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IRFZ44NPBF FAQ

What are the key specifications of IRFZ44NPBF?

From the verified technical profile: Function: N-channel HEXFET power MOSFET · TO-220 (TO-220AB outline); Breakdown voltage: V(BR)DSS 55 V minimum · VGS = 0 V, ID = 250 µA (Static table); On-resistance: RDS(on) 17.5 mΩ maximum · VGS = 10 V, ID = 25 A, pulse ≤ 400 µs, duty ≤ 2% (Static table). These are the catalog-recorded values for IRFZ44NPBF — always re-check them against the manufacturer datasheet revision quoted on your BOM before finalizing the design.