IPB072N15N3

IPB107N20N3G is an Infineon OptiMOS 200 V N-channel power MOSFET in TO-263-3 (D2PAK) — for high-current switching: DC-DC converters, motor drives and industrial power. 88 A continuous drain current, 10.7 mΩ maximum Rds(on) at 10 V, 87 nC total gate charge, -55°C to +175°C junction range, 300 W dissipation. Heat evidence: OptiMOS series in sustained demand for EV and industrial power — D2PAK is the preferred SMD package for Nexperia-alternative sourcing. Selection advice: the IPB prefix is the D2PAK variant — the same die ships in TO-220 as IPP110N20N3G; pick D2PAK for automated SMT assembly. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRF540NPbF is an Infineon 100 V N-channel power MOSFET in TO-220AB — for motor drives, SMPS and high-current switching: the industry workhorse for 100 V bus designs. 33 A continuous drain current, 44 mΩ maximum Rds(on), 47.3 nC total gate charge, -55°C to +175°C junction range. Heat evidence: Nexperia supply disruption has triggered rush buying of alternative MOSFETs from Infineon, onsemi and ST — the IRF540 is among the most universally stocked power FETs. Selection advice: the PbF suffix is lead-free/RoHS-compliant — same die as the legacy IRF540N, specify PbF for all new builds; for 55 V and lower buses the IRFZ44N cuts conduction losses significantly. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRF540ZPBF is an Infineon StrongIRFET 100 V N-channel power MOSFET in TO-220AB — for automotive and high-efficiency switching: 36 A continuous drain current, 26.5 mΩ maximum Rds(on), optimized gate charge, -55°C to +175°C, AEC-Q101 qualified. Selection advice: the Z in IRF540Z denotes StrongIRFET — lower Rds(on) than the standard IRF540N at a small premium; for cost-sensitive non-automotive use the IRF540N suffices. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRFZ24NPBF is an Infineon 55 V N-channel power MOSFET in TO-220AB — for mid-power switching: DC-DC converters, motor drives and load switches. 17 A continuous drain current, 70 mΩ maximum Rds(on), 1–2 V gate threshold, -55°C to +175°C. Selection advice: the NPBF suffix is the lead-free TO-220AB — for higher current in the same voltage class step up to the IRFZ44N; for logic-level drive use the IRLZ24N. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRFZ44NPbF is an Infineon 55 V N-channel power MOSFET in TO-220 — for 12/24/36 V high-current systems: motor controllers, DC-DC synchronous rectification and load switches. 49 A continuous drain current, 17.5 mΩ maximum Rds(on), 63 nC maximum total gate charge, -55°C to +175°C junction range. Heat evidence: Nexperia disruption-driven alternative sourcing — 55 V MOSFETs for low-voltage high-current rails are seeing elevated distributor orders. Selection advice: vs the IRF540N it trades voltage headroom for roughly 2.5x lower conduction losses — pick the IRFZ44N when the bus stays under 55 V; the PbF suffix is the RoHS-compliant version. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRLB8721PBF is an Infineon HEXFET N-channel power MOSFET in TO-220AB — 30 V drain-source voltage, 62 A continuous drain current at 25 °C case temperature, 8.7 mΩ on-resistance at 10 V gate (16 mΩ at 4.5 V), 13 nC total gate charge at 4.5 V, logic-level gate threshold under 2.5 V, 65 W dissipation, tube packing, -55 to +175 °C. The logic-level gate is the selection point: specified 16 mΩ on-resistance at 4.5 V gate — drivable directly from 5 V MCU logic or 3.3 V with reduced margin, unlike standard 10 V MOSFETs. Selection advice: this is a low-voltage 30 V device — it cannot replace 60/100 V MOSFETs in higher-voltage circuits. The PBF suffix is the lead-free version. Bolt the TO-220 tab to a heatsink for continuous high current. Evidence: Infineon IRLB8721 datasheet and distributor listings confirm N-channel, 30 V, 62 A, 8.7 mΩ, logic level and TO-220AB. Match the full IRLB8721PBF code. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

NTMFS5C430NLT1G is an onsemi N-channel power MOSFET in SO-8FL (DFN5 5x6 flat-lead) package, tape and reel — for compact power stages: DC-DC converters and motor drives where a through-hole package will not fit. The flat-lead DFN5 footprint with exposed drain pad is the selection point: power-MOSFET current handling in a low-profile SMD package that solders like a standard SO-8. Selection advice: the T1G suffix denotes tape and reel (1,500 per reel); the T3G variant is the 5,000-reel option — match the suffix to your feeder setup. Against the TO-220 STP55NF06L on this site: this part is the SMD answer where board space matters, the TO-220 the answer where heatsinking matters. Parameters verified against the onsemi datasheet and distributor listings. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

STP16NF06 is an ST N-channel power MOSFET — 60 V, 16 A, RDS(on) 0.08 Ω, TO-220, STripFET II technology. The 60 V / TO-220 combination is the selection point: a workhorse switch for 24–48 V motor drives, DC-DC and load switching — through-hole for easy heatsinking. Selection advice: ST lists the STP16NF06 as Active. At 16 A the 0.08 Ω on-resistance dissipates over 20 W — a heatsink is mandatory, and verify the thermal design against the RthJC. For lower loss in the same footprint consider a newer-generation 60 V MOSFET; for SMD assembly the STD16NF06 (DPAK) is the surface-mount sibling. Evidence: ST data confirms Active, 60 V, 16 A, 0.08 Ω, TO-220, STripFET II. Match the full STP16NF06 code. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

STP36NF06L is an STMicroelectronics 60 V N-channel STripFET II power MOSFET in TO-220 — for 12/24 V rails, motor control and power switching: 100% avalanche tested. 30 A continuous drain current, 32 mΩ typical Rds(on), -55°C to +175°C junction range, Ecopack2 RoHS compliant. Heat evidence: automotive MOSFETs are on allocation watch as vehicle makers dual-source away from disrupted suppliers — AEC-Q101 parts with stable supply are prioritized. Selection advice: the L suffix denotes logic-level-friendly gate threshold (2.5 V max) — vs the IRF540N it offers tighter Rds(on) for 12/24 V systems; confirm your gate drive can deliver the required current for fast switching. Parameters verified against STMicroelectronics documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

BSS169 is an Infineon N-channel depletion-mode small-signal MOSFET in SOT-23 — for circuits that need a normally-on switch: start-up biasing, load switches that default closed, and protection circuits. Depletion mode is the selection point: unlike enhancement MOSFETs it conducts at zero gate voltage and turns off with negative gate drive — the opposite control logic, which catches out first-time users. Selection advice: verify your gate driver can pull negative before substituting an enhancement part — a BSS138 or 2N7002 will not behave the same here. 100 V, 170 mA, AEC-Q101 qualified per the Infineon datasheet. Availability varies by channel — state quantity and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

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