IRF630NPBF
Infineon TechnologiesIRF630NPBF is an N-channel HEXFET power MOSFET from Infineon in TO-220, rated 200 V and 9.3 A with a maximum RDS(on) of 300 milliohm at 10 V gate drive, 82 W dissipation and a 175 C maximum junction temperature. The 200 V class covers offline auxiliary supplies, motor auxiliaries and legacy industrial stages that were qualified on this long-running fifth-generation device. Selection advice: Infineon's product page lists the IRF630NPBF order code as active - do not mix it with the D2PAK variant IRF630NSTRLPBF, which Infineon marks obsolete. Parameters verified against the Infineon IRF630N product page (OPN table, status active).
- MPN
- IRF630NPBF
- Manufacturer
- Infineon Technologies
- Family
- N-channel power MOSFET
- Package
- TO-220
- Manufacturer channel coverage
- Checked by RFQ
- Data last checked
- Commercial check required
- Required order checks
- Suffix, package, date code, lot, source and traceability
Four checks before a commercial offer.
Identity
Exact MPN, manufacturer and suffix
Supply
Supplier type, quantity and freshness
Evidence
Lot, labels, photos and documents
Terms
Price, lead time, payment and shipping
Explore more Discrete Semiconductors records
Browse existing catalog records — same series first, then the same category and manufacturer. These are not confirmed replacements; compatibility requires engineering review.
Procurement coverage for IRF630NPBF
In-depth buyer guides on the market forces affecting this part category — allocation, mergers and technology shifts.