IRLB8721PBF

IRFZ44NPbF is an Infineon 55 V N-channel power MOSFET in TO-220 — for 12/24/36 V high-current systems: motor controllers, DC-DC synchronous rectification and load switches. 49 A continuous drain current, 17.5 mΩ maximum Rds(on), 63 nC maximum total gate charge, -55°C to +175°C junction range. Heat evidence: Nexperia disruption-driven alternative sourcing — 55 V MOSFETs for low-voltage high-current rails are seeing elevated distributor orders. Selection advice: vs the IRF540N it trades voltage headroom for roughly 2.5x lower conduction losses — pick the IRFZ44N when the bus stays under 55 V; the PbF suffix is the RoHS-compliant version. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IPB072N15N3 is an Infineon OptiMOS 3 150V N-channel power MOSFET in TO-263-3 (D2PAK) — for high-power low-voltage motor drives and 48V DC-DC stages: 150V drain-source breakdown, 100A continuous drain current (400A pulsed), 7.2mΩ maximum Rds(on) at 10V, 70nC total gate charge, 300W power dissipation, 0.5K/W junction-to-case thermal resistance, -55°C to +175°C operating range, RoHS compliant. The 7.2mΩ on-resistance keeps conduction losses low at 100A, so high-current stages run cooler and parallel-FET counts can be reduced; the 150V rating fits 48V and 60V buses with comfortable headroom. Business impact: 150V OptiMOS MOSFETs are the workhorse switch for e-mobility and industrial motor drives — an Active, in-stock part on infineon.com with documented FIT reliability data de-risks high-volume power designs. Selection advice: the IPB prefix is the D2PAK (TO-263) SMD variant in tape and reel (ordering code IPB072N15N3GATMA1) — for the through-hole TO-220 version consider the IPP072N15N3; for lower gate charge in the same 150V class consider the OptiMOS 5 generation (IPB073N15N5). Featured on the hqbuy.com recommended list (2026-09-28). Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IPB107N20N3G is an Infineon OptiMOS 200 V N-channel power MOSFET in TO-263-3 (D2PAK) — for high-current switching: DC-DC converters, motor drives and industrial power. 88 A continuous drain current, 10.7 mΩ maximum Rds(on) at 10 V, 87 nC total gate charge, -55°C to +175°C junction range, 300 W dissipation. Heat evidence: OptiMOS series in sustained demand for EV and industrial power — D2PAK is the preferred SMD package for Nexperia-alternative sourcing. Selection advice: the IPB prefix is the D2PAK variant — the same die ships in TO-220 as IPP110N20N3G; pick D2PAK for automated SMT assembly. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRF540NPbF is an Infineon 100 V N-channel power MOSFET in TO-220AB — for motor drives, SMPS and high-current switching: the industry workhorse for 100 V bus designs. 33 A continuous drain current, 44 mΩ maximum Rds(on), 47.3 nC total gate charge, -55°C to +175°C junction range. Heat evidence: Nexperia supply disruption has triggered rush buying of alternative MOSFETs from Infineon, onsemi and ST — the IRF540 is among the most universally stocked power FETs. Selection advice: the PbF suffix is lead-free/RoHS-compliant — same die as the legacy IRF540N, specify PbF for all new builds; for 55 V and lower buses the IRFZ44N cuts conduction losses significantly. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRF540ZPBF is an Infineon StrongIRFET 100 V N-channel power MOSFET in TO-220AB — for automotive and high-efficiency switching: 36 A continuous drain current, 26.5 mΩ maximum Rds(on), optimized gate charge, -55°C to +175°C, AEC-Q101 qualified. Selection advice: the Z in IRF540Z denotes StrongIRFET — lower Rds(on) than the standard IRF540N at a small premium; for cost-sensitive non-automotive use the IRF540N suffices. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRFZ24NPBF is an Infineon 55 V N-channel power MOSFET in TO-220AB — for mid-power switching: DC-DC converters, motor drives and load switches. 17 A continuous drain current, 70 mΩ maximum Rds(on), 1–2 V gate threshold, -55°C to +175°C. Selection advice: the NPBF suffix is the lead-free TO-220AB — for higher current in the same voltage class step up to the IRFZ44N; for logic-level drive use the IRLZ24N. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

STP16NF06 is an ST N-channel power MOSFET — 60 V, 16 A, RDS(on) 0.08 Ω, TO-220, STripFET II technology. The 60 V / TO-220 combination is the selection point: a workhorse switch for 24–48 V motor drives, DC-DC and load switching — through-hole for easy heatsinking. Selection advice: ST lists the STP16NF06 as Active. At 16 A the 0.08 Ω on-resistance dissipates over 20 W — a heatsink is mandatory, and verify the thermal design against the RthJC. For lower loss in the same footprint consider a newer-generation 60 V MOSFET; for SMD assembly the STD16NF06 (DPAK) is the surface-mount sibling. Evidence: ST data confirms Active, 60 V, 16 A, 0.08 Ω, TO-220, STripFET II. Match the full STP16NF06 code. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

STP36NF06L is an STMicroelectronics 60 V N-channel STripFET II power MOSFET in TO-220 — for 12/24 V rails, motor control and power switching: 100% avalanche tested. 30 A continuous drain current, 32 mΩ typical Rds(on), -55°C to +175°C junction range, Ecopack2 RoHS compliant. Heat evidence: automotive MOSFETs are on allocation watch as vehicle makers dual-source away from disrupted suppliers — AEC-Q101 parts with stable supply are prioritized. Selection advice: the L suffix denotes logic-level-friendly gate threshold (2.5 V max) — vs the IRF540N it offers tighter Rds(on) for 12/24 V systems; confirm your gate drive can deliver the required current for fast switching. Parameters verified against STMicroelectronics documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

NTMFS5C430NLT1G is an onsemi N-channel power MOSFET in SO-8FL (DFN5 5x6 flat-lead) package, tape and reel — for compact power stages: DC-DC converters and motor drives where a through-hole package will not fit. The flat-lead DFN5 footprint with exposed drain pad is the selection point: power-MOSFET current handling in a low-profile SMD package that solders like a standard SO-8. Selection advice: the T1G suffix denotes tape and reel (1,500 per reel); the T3G variant is the 5,000-reel option — match the suffix to your feeder setup. Against the TO-220 STP55NF06L on this site: this part is the SMD answer where board space matters, the TO-220 the answer where heatsinking matters. Parameters verified against the onsemi datasheet and distributor listings. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRF9Z34NPBF is an Infineon P-channel power MOSFET — for high-side switching and reverse-polarity protection: -55V drain-source voltage, -19A continuous drain current, 100mOhm on-resistance at VGS -10V, 56W power dissipation, 175C maximum junction temperature, TO-220 through-hole package. The P-channel architecture simplifies high-side drive — no charge-pump or bootstrap supply needed, so the gate drive collapses to a simple level shift; the 175C Tj rating gives thermal headroom that keeps the part inside SOA during overload transients. Business impact: IR MOSFETs are a decades-proven portfolio with multi-source footprints — designs avoid single-source allocation risk on a jellybean power device. Selection advice: the PBF suffix is the lead-free TO-220 tube version — for surface-mount consider the D2PAK IRF9Z34S; verify gate drive voltage delivers at least -10V for full enhancement at rated current. Featured on hqbuy.com hot search (2026-10-05). Parameters verified against Infineon Technologies documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

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