IAUTN08S7N007ATMA1

IAUTN08S7N007ATMA1 is an Infineon OptiMOS 7 80 V N-channel automotive MOSFET in the PG-HSOF-8 (TOLL) leadless power package, supplied on tape and reel — the switching-optimised code of the 80 V TOLL pair, for 48 V architectures needing more transient headroom than the 40 V family offers. Its 0.64 mΩ maximum RDS(on) at 10 V gate drive comes with a typical gate charge of 195 nC, below the 229 nC of its N006 sibling, easing the driver at higher switching frequencies while the 350 A rating still covers high-current 48 V DC-DC stages and zone power distribution. At 200 A the die dissipates about 25.6 W against roughly 22.8 W for the N006 — the explicit trade for the faster switching. The 10 x 12 mm leadless footprint suits automated optical inspection, and the junction range reaches +175 °C. Selection advice: choose this N007 where switching frequency and driver losses matter; step to the N006 (0.57 mΩ) when conduction loss dominates, and to the 100 V N009 for the higher voltage class in the same package. Infineon lists the part as active and preferred. Parameters verified against Infineon documentation.