IAUTN08S7N006ATMA1

IAUTN08S7N006ATMA1 is an Infineon OptiMOS 7 80 V N-channel automotive MOSFET in the PG-HSOF-8 (TOLL) leadless power package, supplied on tape and reel — the lower-resistance code of the 80 V TOLL pair, for 48 V architectures needing more transient headroom than the 40 V family offers. Its 0.57 mΩ maximum RDS(on) at 10 V gate drive (0.53 mΩ typical) and 350 A rating hold conduction loss at 200 A to about 22.8 W, suiting 48 V DC-DC stages and high-current load switches. The trade is gate charge: at 229 nC typical it asks more of the driver than its N007 sibling, so it fits designs where conduction loss dominates over switching frequency. The 10 x 12 mm leadless footprint suits automated optical inspection, and the junction range reaches +175 °C. Selection advice: choose this N006 for the lowest 80 V conduction loss; step to the N007 (0.64 mΩ, 195 nC typical gate charge) when switching speed matters more, and to the top-cooled SSO10T IAUCN codes where board area is the constraint. Infineon lists the part as active and preferred. Parameters verified against Infineon documentation.