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ProductsDiscrete SemiconductorsNVBYST0D6N08X
PACKAGE REFERENCETCPAK1012Confirm case, pinout and ordering suffix before purchase.
MANUFACTURER PART RECORD

NVBYST0D6N08X

onsemi

NVBYST0D6N08X is an onsemi single N-channel power MOSFET in a TCPAK1012 top-cool package — for high-current automotive DC-DC conversion and auxiliary drives where top-side cooling through a heatsink or cold plate beats bottom-pad PCB cooling. The device is rated 80 V and AEC-Q101 qualified; onsemi datasheet body-diode data gives 80 A source current with typical reverse-recovery charge of 777 nC and 63 ns recovery time, which matters in synchronous-rectification dead-time design. Distributor data lists an on-resistance of 0.64 mΩ for this grade — treat that figure as distributor-published data and confirm the guaranteed limits against the onsemi datasheet electrical table before freezing loss calculations. Selection advice: the 0D6 and 0D8 grades on this site differ in on-resistance and recovery-charge class, so pick the grade against your efficiency target rather than by availability alone, and plan the top-cool thermal stack (interface material, insulation, clamping) as part of the layout, since this package moves heat upward. Parameters verified against onsemi documentation.

Discrete SemiconductorsN-channel power MOSFETTCPAK1012
MPN
NVBYST0D6N08X
Manufacturer
onsemi
Family
N-channel power MOSFET
Package
TCPAK1012
Manufacturer channel coverage
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01

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02

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03

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04

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