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MANUFACTURER PART RECORD

LMG5126VBTR

Texas Instruments

LMG5126VBTR is a Texas Instruments wide-input synchronous GaN boost converter — a complete stackable power stage with integrated GaN FETs and drivers, resistor-to-digital configuration, output-voltage tracking and bypass operation — in the 22-pin VQFN-FCRLF package (VBT) on a large tape-and-reel carrier, listed by TI as Active, Production. Despite the LMG prefix it is not a gate-driver IC. Buy against the current datasheet revision: headline currents and the selectable current limit changed between revisions, and the conditioned values live in the parameter table; the package size there follows the datasheet, where TI’s product page disagrees with it. Parameters verified against the TI LMG5126 datasheet SNOSDL9B (Rev. B).

Power ManagementGaN boost converterVQFN-22
MPN
LMG5126VBTR
Manufacturer
Texas Instruments
Family
GaN boost converter
Package
VQFN-22
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Key technical specifications

Ordering-code highlights reviewed against official manufacturer documentation.

Function
Wide-input synchronous GaN boost converter — stackable multiphase boost with integrated GaN FETs and drivers, resistor-to-digital configuration, analog/digital output-voltage tracking and VI-to-VOUT bypass (§1, §3)
Recommended operating conditions
VI 2.5 V to 42 V when VBIAS ≥ 6.5 V or VOUT ≥ 6 V (startup headline range 6.5 V to 42 V); VBIAS 6.5 V to 42 V; VOUT 6 V to 60 V; fSW 300 kHz to 2500 kHz (§5.3)
Power-switch RDS(on)
High-side GaN FET typ 4 / max 8.5 mΩ; low-side GaN FET typ 4 / max 8.5 mΩ (TJ = 25 °C, §5.5)
Quiescent currents (Rev. B)
Shutdown current into BIAS/CSA/CSB/SW typ 5 / max 100 µA (VUVLO/EN = 0 V, VOUT = 12 V); operating quiescent, FPWM, typ 1.5 / max 2.5 mA (§5.5 header conditions apply)
Protections
Selectable OVP levels 25 / 35 / 50 / 65 V (SYNCOUT resistor); selectable current-limit sense voltage 29 mV or 60 mV; average input current limit; thermal shutdown 175 °C typ rising, 15 °C hysteresis; integrated boot capacitor and diode, boot UVLO and hiccup-mode fault protection (§5.5, §6.3.16)
Stacking
Up to 4 devices interleaved multiphase, with or without an external clock (§1)
Absolute maximum ratings
BIAS/CSA −0.3 V to +50 V; VOUT −0.3 V to +75 V; SW −5 V to +75 V (−15 V to +85 V for 10 ns); configuration/signal pins −0.3 V to +5.5 V, except RT −0.3 V to +2.5 V; SW/VOUT continuous current 35 A at TJ = 25 °C; TJ −40 °C to +150 °C; TSTG −55 °C to +150 °C (§5.1)
Package
VQFN-FCRLF-22 (VBT), lead-less with wettable flanks, 6 mm × 4.5 mm (§1 package information); R = LARGE T&R, 3,000 pcs/reel; device marking LG5126; MSL Level-2 (Package Option Addendum)
Source: TI LMG5126 datasheet SNOSDL9B (Rev. B) + Package Option Addendum · Reviewed 2026-10-30
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COMMON QUESTIONS

LMG5126VBTR FAQ

What are the key specifications of LMG5126VBTR?

From the verified technical profile: Function: Wide-input synchronous GaN boost converter — stackable multiphase boost with integrated GaN FETs and drivers, resistor-to-digital configuration, analog/digital output-voltage tracking and VI-to-VOUT bypass (§1, §3); Recommended operating conditions: VI 2.5 V to 42 V when VBIAS ≥ 6.5 V or VOUT ≥ 6 V (startup headline range 6.5 V to 42 V); VBIAS 6.5 V to 42 V; VOUT 6 V to 60 V; fSW 300 kHz to 2500 kHz (§5.3); Power-switch RDS(on): High-side GaN FET typ 4 / max 8.5 mΩ; low-side GaN FET typ 4 / max 8.5 mΩ (TJ = 25 °C, §5.5). These are the catalog-recorded values for LMG5126VBTR — always re-check them against the manufacturer datasheet revision quoted on your BOM before finalizing the design.