IKW75N65EH5XKSA1

IKW75N65EH5XKSA1 is the full orderable part number for the Infineon IKW75N65EH5 trench IGBT in the PG-TO247-3 package (package marking K75EEH5); the bare type name IKW75N65EH5 alone is not the orderable code. The type is listed on the maker’s product page as a current line; no per-variant status word was captured word-for-word during verification, so this page rests its lifecycle position on the maker’s current datasheet (revision 2.2) and makes no stronger claim. Verified figures are the EH5 sheet’s own: a collector-emitter voltage of 650 V, collector current of 75 A at a 100 °C case temperature (90 A at 25 °C, bond-wire limited), pulsed collector current of 300 A, collector-emitter saturation voltage of 1.65 V typical and 2.10 V maximum at 15 V gate drive and 75 A, gate threshold of 3.2 V minimum, 4.0 V typical and 4.8 V maximum, total gate charge of 160 nC typical, total power dissipation of 395 W maximum, and a junction ceiling of 175 °C; the co-packed diode reads 1.35 V typical and 1.70 V maximum forward at 75 A with a 92 ns typical reverse-recovery time. The selection point is a 650 V / 75 A trench IGBT with a fast co-packed diode for motor drives, UPS and induction heating. Selection advice: keep the variant discipline — saturation figures circulated for the IKW75N65ES5 (1.42 V typical / 1.75 V maximum) belong to a different variant and are not this code’s ratings, and the isolated-package IKFW sibling’s lifecycle position does not carry over to this TO-247-3 code. Parameters verified against the Infineon IKW75N65EH5 datasheet.