IRF9Z34NPBF

IRF9540NPBF is an Infineon P-channel 100 V power MOSFET in TO-220AB — for H-bridge high sides, reverse-polarity protection and load switches: -23 A continuous drain current, 117 mΩ maximum Rds(on) at 10 V, 97 nC total gate charge, -55°C to +175°C. Heat evidence: P-channel complement to the IRF540N — high-side switching without charge pumps drives sustained demand. Selection advice: the NPBF suffix is the lead-free TO-220AB — pair with the IRF540N for complementary H-bridge designs; for lower Rds(on) consider the StrongIRFET P-channel series. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

FQP27P06 is an onsemi (Fairchild) P-channel 60 V power MOSFET in TO-220 — for H-bridge and reverse-polarity protection: -27 A continuous drain current, 70 mΩ maximum Rds(on) at 10 V, -55°C to +175°C. Heat evidence: onsemi QFET series — P-channel high-current for H-bridge designs rides the alternative-sourcing wave. Selection advice: the FQP prefix is the TO-220 variant — pair with N-channel QFETs for complementary bridges; the P-channel simplifies high-side drive vs N-channel charge pumps. Parameters verified against onsemi documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

RD3L140SPFRATL is a ROHM P-channel power MOSFET in TO-252 (DPAK) - for high-side switching and load control: -60V drain-source voltage, -14A continuous drain current, 84 mOhm maximum on-resistance at -10V gate drive and 103 mOhm maximum at -4.5V gate drive, 27nC typical total gate charge, 20W power dissipation, -55C to 150C, AEC-Q101 qualified. The P-channel polarity is the selection point: high-side switching with a simple ground-referenced gate drive, no charge pump or bootstrap circuit, which shortens the gate-drive design and shrinks the surrounding BOM. Business impact: one AEC-Q101 DPAK device covers automotive and industrial load switches, reverse-polarity protection and motor power stages with a single qualified code. Selection advice: the TL suffix is the 2500-piece tape-and-reel packing - verify the -4.5V on-resistance if driving from logic-level rails, and size copper and thermal relief for 20W dissipation since DPAK thermal performance depends on board copper. Ranked #19 on the hqew.com yesterday-hot list (2026-10-16). Parameters verified against ROHM documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRFZ44NPbF is an Infineon 55 V N-channel power MOSFET in TO-220 — for 12/24/36 V high-current systems: motor controllers, DC-DC synchronous rectification and load switches. 49 A continuous drain current, 17.5 mΩ maximum Rds(on), 63 nC maximum total gate charge, -55°C to +175°C junction range. Heat evidence: Nexperia disruption-driven alternative sourcing — 55 V MOSFETs for low-voltage high-current rails are seeing elevated distributor orders. Selection advice: vs the IRF540N it trades voltage headroom for roughly 2.5x lower conduction losses — pick the IRFZ44N when the bus stays under 55 V; the PbF suffix is the RoHS-compliant version. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRLB8721PBF is an Infineon HEXFET N-channel power MOSFET in TO-220AB — 30 V drain-source voltage, 62 A continuous drain current at 25 °C case temperature, 8.7 mΩ on-resistance at 10 V gate (16 mΩ at 4.5 V), 13 nC total gate charge at 4.5 V, logic-level gate threshold under 2.5 V, 65 W dissipation, tube packing, -55 to +175 °C. The logic-level gate is the selection point: specified 16 mΩ on-resistance at 4.5 V gate — drivable directly from 5 V MCU logic or 3.3 V with reduced margin, unlike standard 10 V MOSFETs. Selection advice: this is a low-voltage 30 V device — it cannot replace 60/100 V MOSFETs in higher-voltage circuits. The PBF suffix is the lead-free version. Bolt the TO-220 tab to a heatsink for continuous high current. Evidence: Infineon IRLB8721 datasheet and distributor listings confirm N-channel, 30 V, 62 A, 8.7 mΩ, logic level and TO-220AB. Match the full IRLB8721PBF code. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRLZ44NPbF is an Infineon logic-level 55 V N-channel power MOSFET in TO-220 — for MCU-driven power stages: Arduino/Raspberry Pi motor drivers, load switches and relay replacements. Fully enhanced at 4.5 V gate drive, 47 A continuous drain current, 22 mΩ maximum Rds(on) at 10 V (35 mΩ at 4.5 V), 1–2 V gate threshold. Heat evidence: logic-level MOSFETs are in sustained demand as more designs drive power stages directly from 3.3/5 V logic — part of the broader Nexperia-alternative sourcing wave. Selection advice: the L in IRLZ44N means logic-level — the key differentiator vs the IRFZ44N; drive it straight from 5 V MCU outputs with no gate driver needed. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

BSS169 is an Infineon N-channel depletion-mode small-signal MOSFET in SOT-23 — for circuits that need a normally-on switch: start-up biasing, load switches that default closed, and protection circuits. Depletion mode is the selection point: unlike enhancement MOSFETs it conducts at zero gate voltage and turns off with negative gate drive — the opposite control logic, which catches out first-time users. Selection advice: verify your gate driver can pull negative before substituting an enhancement part — a BSS138 or 2N7002 will not behave the same here. 100 V, 170 mA, AEC-Q101 qualified per the Infineon datasheet. Availability varies by channel — state quantity and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

The IKW40N120H3 is Infineon's TRENCHSTOP HighSpeed3 1200 V IGBT in TO-247-3, rated 40 A nominal with 160 A pulsed capability and 483 W dissipation, a typical 2.05 V collector-emitter saturation voltage, and an integrated anti-parallel diode. The HighSpeed3 trench technology targets 20–100 kHz switching with low tail current and fast turn-off, which cuts switching losses in solar string inverters, UPS systems, welders and induction heaters compared with standard-speed 1200 V IGBTs. Infineon's official discrete-IGBT portfolio lists the part as a new active product, and it is the exact switch pre-assembled on Infineon's EVAL-1ED3321MC12N gate-driver evaluation board — a practical signal of its reference-design status. Selection advice: choose HighSpeed3 when your stage switches above roughly 20 kHz; for line-frequency or low-kHz motor drives a slower, lower-VCE(sat) IGBT family is usually the cheaper fit. The co-packaged diode makes it a one-part solution for hard-switched half-bridges, so state your switching frequency and topology in the RFQ for a confirmed match. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IPB072N15N3 is an Infineon OptiMOS 3 150V N-channel power MOSFET in TO-263-3 (D2PAK) — for high-power low-voltage motor drives and 48V DC-DC stages: 150V drain-source breakdown, 100A continuous drain current (400A pulsed), 7.2mΩ maximum Rds(on) at 10V, 70nC total gate charge, 300W power dissipation, 0.5K/W junction-to-case thermal resistance, -55°C to +175°C operating range, RoHS compliant. The 7.2mΩ on-resistance keeps conduction losses low at 100A, so high-current stages run cooler and parallel-FET counts can be reduced; the 150V rating fits 48V and 60V buses with comfortable headroom. Business impact: 150V OptiMOS MOSFETs are the workhorse switch for e-mobility and industrial motor drives — an Active, in-stock part on infineon.com with documented FIT reliability data de-risks high-volume power designs. Selection advice: the IPB prefix is the D2PAK (TO-263) SMD variant in tape and reel (ordering code IPB072N15N3GATMA1) — for the through-hole TO-220 version consider the IPP072N15N3; for lower gate charge in the same 150V class consider the OptiMOS 5 generation (IPB073N15N5). Featured on the hqbuy.com recommended list (2026-09-28). Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IPB107N20N3G is an Infineon OptiMOS 200 V N-channel power MOSFET in TO-263-3 (D2PAK) — for high-current switching: DC-DC converters, motor drives and industrial power. 88 A continuous drain current, 10.7 mΩ maximum Rds(on) at 10 V, 87 nC total gate charge, -55°C to +175°C junction range, 300 W dissipation. Heat evidence: OptiMOS series in sustained demand for EV and industrial power — D2PAK is the preferred SMD package for Nexperia-alternative sourcing. Selection advice: the IPB prefix is the D2PAK variant — the same die ships in TO-220 as IPP110N20N3G; pick D2PAK for automated SMT assembly. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

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