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ProductsDiscrete SemiconductorsIRF3710PBF
PACKAGE REFERENCETO-220Confirm case, pinout and ordering suffix before purchase.
MANUFACTURER PART RECORD

IRF3710PBF

Infineon

IRF3710PBF is the Infineon IRF3710 N-channel MOSFET in TO-220 (tube packing, 50 pieces), with the orderable part number verified word-for-word in the maker’s datasheet ordering table (datasheet revision 2.1, July 2026). Its lifecycle position is stated on current evidence: the maker’s sheet is in its latest 2026 revision and the package PCN chain runs into 2026, so the type is presented as a current line on that basis, with the maker’s status word itself held for the final-check batch. Verified figures: drain-source breakdown of 100 V, on-state resistance of 23 mΩ maximum, continuous drain current of 57 A at a 25 °C case temperature and 40 A at a 100 °C case temperature, pulsed drain current of 180 A, total power dissipation of 200 W maximum, gate-source voltage of ±20 V, and a junction range of −55 °C to +175 °C. The selection point is a 100 V through-hole trench MOSFET for motor drive, DC/DC conversion and automotive loads where the tab package’s thermal path does the work. Selection advice: read the figures from Infineon’s own sheet only — clone documents circulating under this designation print different ratings (a 60 A current and a 160 W dissipation among them) and are not this code’s evidence. Parameters verified against the Infineon IRF3710 datasheet.

Discrete SemiconductorsN-channel MOSFETTO-220
MPN
IRF3710PBF
Manufacturer
Infineon
Family
N-channel MOSFET
Package
TO-220
Manufacturer channel coverage
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01

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02

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03

Evidence

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04

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