IKW40N120H3

The FGH40N60SMD is onsemi's 600 V Field Stop trench IGBT in TO-247-3LD: 40 A at Tc = 100 °C (80 A at 25 °C), 120 A pulsed collector current, 349 W power dissipation and a −55 to +175 °C operating junction range. Field Stop technology delivers low saturation voltage with short tail current, giving motor drives, UPS and solar inverter stages an efficient, rugged 600 V workhorse that keeps working when the heatsink runs hot. The 175 °C junction ceiling adds thermal headroom that directly improves overload tolerance and field reliability. The official onsemi datasheet documents the full absolute-maximum and thermal tables, and onsemi's RoHS compliance page lists the orderable code FGH40N60SMD-F085 as Active. Selection advice: this is the 40 A member of a broad Field Stop family — the 60 A FGH60N60SMD appears in onsemi's own change notifications as the drop-up option, so state your current margin in the RFQ and we can quote either; confirm tube packing (30 units per tube) matches your line. Parameters verified against onsemi documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

The STGW40H120DF2 is STMicroelectronics' 1200 V, 40 A high-speed H-series IGBT in TO-247, with a typical 2.1 V VCE(sat) at 40 A, 175 °C maximum junction temperature, 5 µs short-circuit withstand time and a very fast recovery co-packaged antiparallel diode. The H series is engineered as the optimum compromise between conduction and switching loss for high-frequency converters — total switching energy of 2.32 mJ at 25 °C keeps 20–100 kHz photovoltaic inverters, UPS and welding stages efficient, while the slightly positive VCE(sat) temperature coefficient makes parallel operation safe. ST's eStore lists the part as Active with industrial grade and ECOPACK2 compliance. Selection advice: the DF2 suffix denotes the fast-recovery diode co-pack — specify it for hard-switched PFC and boost stages where diode recovery dominates losses; for resonant topologies where the diode barely conducts, ask whether a diode-less variant of the same H-series die would trim the BOM. State the topology and switching frequency in your RFQ so the offered lot is reconfirmed against the right use case. Parameters verified against STMicroelectronics documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

The IPW65R041CFD7 is Infineon's 650 V CoolMOS CFD7 superjunction MOSFET in TO-247-3: 50 A continuous, 211 A pulsed, 102 nC total gate charge, built on the 41 mΩ on-resistance class. CFD7 integrates a fast body diode with up to 69% lower reverse recovery charge than competing devices and the lowest reverse recovery time in its market segment, which is exactly what soft-switching LLC and ZVS phase-shift full-bridge stages need — short dead times, high operating frequency and commutation ruggedness without snubber overhead. The result is measurably higher conversion efficiency in server, telecom and EV-charging power supplies, where every fraction of a point compounds across the fleet's electricity bill. Infineon's official portfolio page lists IPW65R041CFD7 as a new active product, and Infineon publishes a FIT reliability report for this exact part number. Selection advice: CFD7 is the successor to the CFD2 family with reduced gate charge and improved turn-off behavior — for new designs prefer CFD7 over older CFD2 stock; the 41 mΩ rating balances conduction loss against die cost, and a TOLL-packaged sibling (IPT65R040CFD7) is listed in the same CFD7 portfolio for surface-mount lines — state your preferred package in the RFQ. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

BSS169 is an Infineon N-channel depletion-mode small-signal MOSFET in SOT-23 — for circuits that need a normally-on switch: start-up biasing, load switches that default closed, and protection circuits. Depletion mode is the selection point: unlike enhancement MOSFETs it conducts at zero gate voltage and turns off with negative gate drive — the opposite control logic, which catches out first-time users. Selection advice: verify your gate driver can pull negative before substituting an enhancement part — a BSS138 or 2N7002 will not behave the same here. 100 V, 170 mA, AEC-Q101 qualified per the Infineon datasheet. Availability varies by channel — state quantity and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IPB072N15N3 is an Infineon OptiMOS 3 150V N-channel power MOSFET in TO-263-3 (D2PAK) — for high-power low-voltage motor drives and 48V DC-DC stages: 150V drain-source breakdown, 100A continuous drain current (400A pulsed), 7.2mΩ maximum Rds(on) at 10V, 70nC total gate charge, 300W power dissipation, 0.5K/W junction-to-case thermal resistance, -55°C to +175°C operating range, RoHS compliant. The 7.2mΩ on-resistance keeps conduction losses low at 100A, so high-current stages run cooler and parallel-FET counts can be reduced; the 150V rating fits 48V and 60V buses with comfortable headroom. Business impact: 150V OptiMOS MOSFETs are the workhorse switch for e-mobility and industrial motor drives — an Active, in-stock part on infineon.com with documented FIT reliability data de-risks high-volume power designs. Selection advice: the IPB prefix is the D2PAK (TO-263) SMD variant in tape and reel (ordering code IPB072N15N3GATMA1) — for the through-hole TO-220 version consider the IPP072N15N3; for lower gate charge in the same 150V class consider the OptiMOS 5 generation (IPB073N15N5). Featured on the hqbuy.com recommended list (2026-09-28). Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IPB107N20N3G is an Infineon OptiMOS 200 V N-channel power MOSFET in TO-263-3 (D2PAK) — for high-current switching: DC-DC converters, motor drives and industrial power. 88 A continuous drain current, 10.7 mΩ maximum Rds(on) at 10 V, 87 nC total gate charge, -55°C to +175°C junction range, 300 W dissipation. Heat evidence: OptiMOS series in sustained demand for EV and industrial power — D2PAK is the preferred SMD package for Nexperia-alternative sourcing. Selection advice: the IPB prefix is the D2PAK variant — the same die ships in TO-220 as IPP110N20N3G; pick D2PAK for automated SMT assembly. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRF3205PBF is an Infineon HEXFET N-channel power MOSFET in TO-220AB, tube — for high-current switching: motor drives, inverters, DC-DC stages and battery protection where tens of amps must switch efficiently. 55 V, 110 A with 8 mΩ Rds(on) is the selection point: extremely low conduction loss at high current. Selection advice: the PBF suffix denotes the lead-free finish. The 110 A rating is specified at 25 °C case temperature — in practice the TO-220 package and your heatsink set the real continuous current, so thermal design decides what you can actually run. Fully avalanche rated with fast switching and ±20 V gate drive. The 146 nC gate charge needs a capable gate driver for fast switching — do not drive the gate directly from a weak MCU pin at high frequency. For logic-level drive from 3.3 V or 5 V MCUs, pick a logic-level MOSFET instead — this part needs 10 V gate drive for full enhancement. Parameters verified against distributor and manufacturer documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRF540NPbF is an Infineon 100 V N-channel power MOSFET in TO-220AB — for motor drives, SMPS and high-current switching: the industry workhorse for 100 V bus designs. 33 A continuous drain current, 44 mΩ maximum Rds(on), 47.3 nC total gate charge, -55°C to +175°C junction range. Heat evidence: Nexperia supply disruption has triggered rush buying of alternative MOSFETs from Infineon, onsemi and ST — the IRF540 is among the most universally stocked power FETs. Selection advice: the PbF suffix is lead-free/RoHS-compliant — same die as the legacy IRF540N, specify PbF for all new builds; for 55 V and lower buses the IRFZ44N cuts conduction losses significantly. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRF540ZPBF is an Infineon StrongIRFET 100 V N-channel power MOSFET in TO-220AB — for automotive and high-efficiency switching: 36 A continuous drain current, 26.5 mΩ maximum Rds(on), optimized gate charge, -55°C to +175°C, AEC-Q101 qualified. Selection advice: the Z in IRF540Z denotes StrongIRFET — lower Rds(on) than the standard IRF540N at a small premium; for cost-sensitive non-automotive use the IRF540N suffices. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRF9540NPBF is an Infineon P-channel 100 V power MOSFET in TO-220AB — for H-bridge high sides, reverse-polarity protection and load switches: -23 A continuous drain current, 117 mΩ maximum Rds(on) at 10 V, 97 nC total gate charge, -55°C to +175°C. Heat evidence: P-channel complement to the IRF540N — high-side switching without charge pumps drives sustained demand. Selection advice: the NPBF suffix is the lead-free TO-220AB — pair with the IRF540N for complementary H-bridge designs; for lower Rds(on) consider the StrongIRFET P-channel series. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.