STGW40H120DF2

The FGH40N60SMD is onsemi's 600 V Field Stop trench IGBT in TO-247-3LD: 40 A at Tc = 100 °C (80 A at 25 °C), 120 A pulsed collector current, 349 W power dissipation and a −55 to +175 °C operating junction range. Field Stop technology delivers low saturation voltage with short tail current, giving motor drives, UPS and solar inverter stages an efficient, rugged 600 V workhorse that keeps working when the heatsink runs hot. The 175 °C junction ceiling adds thermal headroom that directly improves overload tolerance and field reliability. The official onsemi datasheet documents the full absolute-maximum and thermal tables, and onsemi's RoHS compliance page lists the orderable code FGH40N60SMD-F085 as Active. Selection advice: this is the 40 A member of a broad Field Stop family — the 60 A FGH60N60SMD appears in onsemi's own change notifications as the drop-up option, so state your current margin in the RFQ and we can quote either; confirm tube packing (30 units per tube) matches your line. Parameters verified against onsemi documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

The IKW40N120H3 is Infineon's TRENCHSTOP HighSpeed3 1200 V IGBT in TO-247-3, rated 40 A nominal with 160 A pulsed capability and 483 W dissipation, a typical 2.05 V collector-emitter saturation voltage, and an integrated anti-parallel diode. The HighSpeed3 trench technology targets 20–100 kHz switching with low tail current and fast turn-off, which cuts switching losses in solar string inverters, UPS systems, welders and induction heaters compared with standard-speed 1200 V IGBTs. Infineon's official discrete-IGBT portfolio lists the part as a new active product, and it is the exact switch pre-assembled on Infineon's EVAL-1ED3321MC12N gate-driver evaluation board — a practical signal of its reference-design status. Selection advice: choose HighSpeed3 when your stage switches above roughly 20 kHz; for line-frequency or low-kHz motor drives a slower, lower-VCE(sat) IGBT family is usually the cheaper fit. The co-packaged diode makes it a one-part solution for hard-switched half-bridges, so state your switching frequency and topology in the RFQ for a confirmed match. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

2N3055 is an ST NPN power transistor in TO-3 (TO-204AA) metal-can — VCEO 60 V, continuous collector current 15 A, the classic linear-regulator pass transistor. The TO-3 metal can is the selection point: 115 W dissipation with proper heatsinking — the device that built generations of bench power supplies, suited for audio, power-linear and switching applications. Selection advice: lifecycle warning — ST lists the 2N3055 as obsolete (out of production); for repairs and legacy builds we source remaining distributor stock, and for new designs use a current-production power transistor or MOSFET. Its PNP complement is the MJ2955 — for push-pull or complementary output stages the two are specified as a pair. Evidence: ST data confirms NPN, TO-3, obsolete status. Match the full 2N3055 code on your BOM. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

ST lists BD139 as ACTIVE (in volume production) — an NPN silicon medium-power transistor, SOT-32 (TO-126) plastic package. The TO-126 package is the selection point between small-signal and TO-220 power devices: it handles medium power with a smaller footprint than TO-220, suiting driver stages and low-power audio outputs. Selection advice: the complementary PNP is the BD140 — for push-pull driver stages, source both from the same manufacturer to keep the pair matched. Verify your collector dissipation against the package thermal limits with margin. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

ST lists BD140 as ACTIVE (in volume production) — a PNP silicon power transistor, SOT-32 (TO-126) plastic package. The TO-126 package positions it between small-signal transistors and TO-220 power devices: medium power handling in a compact footprint for driver stages. Selection advice: the complementary NPN is the BD139 — for push-pull stages, pair them from the same manufacturer to keep characteristics matched. Verify collector dissipation against the package thermal limits with margin. Parameters verified against the ST official product page. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

MJ2955 is an ST PNP power transistor in TO-3 (TO-204AA) metal-can — VCEO 60 V, continuous collector current 15 A, the PNP complement of the 2N3055. The complementary pair is the selection point: MJ2955 with 2N3055 forms the classic push-pull output stage for audio amplifiers and complementary linear regulators — one cannot be substituted by the other, they are a matched NPN/PNP pair. Selection advice: lifecycle warning — ST lists the MJ2955 as obsolete (out of production); for repairs and legacy builds we source remaining distributor stock, and for new designs use current-production complementary pairs. In push-pull stages replace both devices together to keep the pair matched. Evidence: ST data confirms PNP, TO-3, obsolete status, complementary to 2N3055. Match the full MJ2955 code on your BOM. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

The SCTW100N120G2AG is STMicroelectronics' 1200 V automotive-grade SiC MOSFET in the HiP247 package, pairing 75 A continuous current with a typical 30 mΩ on-resistance at VGS = 18 V. As an AEC-Q101 qualified Gen 2 device, it combines very fast switching with low gate charge, so designers can push switching frequencies well above silicon IGBT practice and shrink magnetics and heatsinks in the power stage. That translates directly into higher power density for EV traction inverters and on-board chargers, and into lower semiconductor losses for DC fast-charging and high-voltage auxiliary converters. ST's official datasheet and eStore listing confirm the device as Active in the automotive portfolio. Selection advice: its automotive qualification is the key differentiator against industrial-only 1200 V SiC MOSFETs — specify it when the program requires PPAP-grade traceability, and keep the 18 V recommended gate drive in the design from the start, because 15 V drive leaves on-resistance and switching margin on the table. For lower-current nodes in the same system, pairing it with an 80 mΩ-class device such as ROHM's SCT3080KL balances BOM cost. Parameters verified against STMicroelectronics documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

STGP19NC60HD is a STMicroelectronics very fast IGBT in TO-220 — for hard-switching power stages: motor drives, UPS and induction heating. 600 V collector-emitter, 19 A continuous at 100°C (40 A at 25°C), very soft ultra-fast recovery antiparallel diode, PowerMESH technology for the switching/on-state trade-off. Heat evidence: IGBT sourcing is active as Nexperia supply disruption pushes buyers toward ST and Infineon alternatives — ST online store and DigiKey carry stock with 20-week factory lead times reported. Selection advice: the P suffix is TO-220 through-hole — the same die ships as STGB19NC60HDT4 (D²PAK) and STGW19NC60HD (TO-247); match the package to your heatsink layout, the three are not footprint-compatible. Parameters verified against STMicroelectronics datasheet DS4967. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

STP16NF06 is an ST N-channel power MOSFET — 60 V, 16 A, RDS(on) 0.08 Ω, TO-220, STripFET II technology. The 60 V / TO-220 combination is the selection point: a workhorse switch for 24–48 V motor drives, DC-DC and load switching — through-hole for easy heatsinking. Selection advice: ST lists the STP16NF06 as Active. At 16 A the 0.08 Ω on-resistance dissipates over 20 W — a heatsink is mandatory, and verify the thermal design against the RthJC. For lower loss in the same footprint consider a newer-generation 60 V MOSFET; for SMD assembly the STD16NF06 (DPAK) is the surface-mount sibling. Evidence: ST data confirms Active, 60 V, 16 A, 0.08 Ω, TO-220, STripFET II. Match the full STP16NF06 code. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

STP36NF06L is an STMicroelectronics 60 V N-channel STripFET II power MOSFET in TO-220 — for 12/24 V rails, motor control and power switching: 100% avalanche tested. 30 A continuous drain current, 32 mΩ typical Rds(on), -55°C to +175°C junction range, Ecopack2 RoHS compliant. Heat evidence: automotive MOSFETs are on allocation watch as vehicle makers dual-source away from disrupted suppliers — AEC-Q101 parts with stable supply are prioritized. Selection advice: the L suffix denotes logic-level-friendly gate threshold (2.5 V max) — vs the IRF540N it offers tighter Rds(on) for 12/24 V systems; confirm your gate drive can deliver the required current for fast switching. Parameters verified against STMicroelectronics documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.