CJ2305

CJ2305 is a P-channel MOSFET from CJ (Jiangsu Changjing) in SOT-23, verified against the maker’s own datasheet, revision 2.3, which prints package marking S5 for this code. Verified figures: drain-source breakdown voltage of -12 V, continuous drain current of -4.1 A, on-state resistance of 30 mΩ typical and 45 mΩ maximum at -4.5 V gate drive (40 mΩ typical and 60 mΩ maximum at -2.5 V, and 60 mΩ typical and 90 mΩ maximum at -1.8 V), zero-gate-voltage drain current of -1 µA, input capacitance of 740 pF and forward transconductance of 6 S. The selection point is a -12 V P-channel that still conducts hard at logic-level gate drive, for load switching and DC-DC conversion in portable devices. Selection advice: keep this code separate from the CJ2305A, a different Changjing variant whose on-resistance and dissipation figures differ and do not carry over; and budget resistance at your actual gate voltage — the -1.8 V row, not the -4.5 V headline, governs a switch driven from a single-cell rail. Parameters verified against the Changjing CJ2305 datasheet, revision 2.3.