BSS84LT1G

BSS84LT1G is an onsemi P-channel small-signal MOSFET in SOT-23, tape and reel, lead-free (the G suffix) — the classic high-side switching FET for load switches, power gating and level shifting; polarity is P-channel, so source sits at the higher rail and the gate is pulled down to turn it on. The ratings, with bases kept separate as the datasheet states them: drain-source voltage −50 V, gate-source ±20 V, continuous drain current −130 mA at TA = 25 °C, and the pulsed rating −520 mA for pulses of 10 µs or shorter — the pulsed figure is not a continuous capability. Threshold voltage is −0.9 to −2.0 V at VDS = VGS and ID = −250 µA; on-resistance is 4.7 Ω typical and 10 Ω maximum at VGS = −5 V and ID = −100 mA (the electrical measurements are pulsed at ≤300 µs and ≤2% duty); dissipation 225 mW; junction range −55 to +150 °C. Selection advice: with 10 Ω worst-case on-resistance this is a signal and light-load switch, not a power-path part — at 100 mA the drop can reach a volt, so for load currents beyond that class step up to a lower-resistance P-channel in a larger package. onsemi status wording for this code was not captured for this record, so no status is claimed here. Parameters verified against the onsemi BSS84LT1 device data.