SI2301CDS-T1-GE3

SI2301CDS-T1-GE3 is the lead-free, halogen-free ordering code for the Vishay Si2301CDS P-channel MOSFET in SOT-23 (TO-236), verified against Vishay’s own datasheet ordering information. Vishay’s specification-comparison document names this code as the current replacement for the Si2301BDS-T1-GE3, and that replacement statement is the lifecycle evidence this page rests on: no separate status field for the code was captured word-for-word, so no lifecycle grade beyond it is claimed and the code joins the final-check list. Verified figures: drain-source voltage of -20 V, continuous drain current of -3.1 A at a 25 °C case temperature, on-state resistance of 0.090 Ω typical and 0.112 Ω maximum at -4.5 V gate drive (0.110 Ω typical and 0.142 Ω maximum at -2.5 V), and gate-threshold voltage of -0.4 V to -1 V. Selection advice: do not substitute documentation from the Si2301HDS — a newer, different type whose sheet circulates under a similar name — and note the ±8 V gate rating when the load switch sits on a rail that can exceed it. Parameters verified against the Vishay Si2301CDS datasheet.