SI2309CDS-T1-GE3

SI2309CDS-T1-GE3 is the lead-free, halogen-free ordering code for the Vishay Si2309CDS P-channel MOSFET in SOT-23 (TO-236), verified on Vishay’s own data: the maker’s specification-comparison document names this code as the current replacement for the Si2309DS-T1-GE3. Verified figures: drain-source voltage of -60 V, continuous drain current of -1.6 A at a 25 °C case temperature, on-state resistance of 0.285 Ω typical and 0.345 Ω maximum at -10 V gate drive, gate-threshold voltage of -1 V to -3 V, and total gate charge of 2.7 nC typical and 4.1 nC maximum. The selection point is voltage class: at -60 V this is the SOT-23 P-channel for auxiliary rails and load paths that outrun the -20 V and -30 V members of the same family, at the cost of a higher on-resistance. Selection advice: the CDS generation’s figures supersede the DS generation’s — check an offer against the 0.345 Ω ceiling above, not the older sheet. Parameters verified against the Vishay Si2309CDS datasheet.