RTP100E2P6G1FL

The RTP100E2P6G1FL is a 100 V enhancement-mode GaN FET from Renesas' first-generation REXGaN family, with typical on-resistance of 2.6 mohm, 9.4 nC gate charge and 46 nC output charge in a silicon-compatible 5 x 6 mm FCLGA footprint. Zero reverse-recovery charge and the low charge figures cut the hard-switching figure of merit by up to 35% and the soft-switching figure by up to 63% against comparable GaN devices, which translates directly into higher frequency, smaller magnetics and lower loss in AI data-centre power, motor drives, robotics, factory automation, power tools and solar microinverters. The device is JEDEC qualified for volume production. Selection advice: this mid-resistance code suits designs optimising cost and gate-drive simplicity; where conduction loss dominates, the lower-resistance family members are the better pick, and GaN layouts still demand tight gate loops and controlled slew rates to realise the datasheet figures in practice. Parameters verified against Renesas Electronics documentation.