RTP100E1P2G1FL-DSC

The RTP100E1P2G1FL-DSC is the lowest-resistance member of Renesas' first 100 V REXGaN FET family, an enhancement-mode GaN device with typical on-resistance of 1.2 mohm in a dual-side-cooled (DSC) FCLGA package for top-side heatsinking. Its low gate and output charge and zero reverse-recovery charge target the hardest-switching, highest-current positions in AI data-centre power conversion, industrial motor drives, robotics and solar microinverters, where every milliohm of on-resistance converts directly into conduction loss and heat. The DSC package supports the thermal design such stages need, extracting heat from both faces of the device. Selection advice: at 1.2 mohm, PCB copper and package resistance become a significant share of the total path resistance, so co-design the layout and cooling with the device choice; also confirm the DSC suffix in your RFQ, because mixing cooled and standard variants late in a build creates mechanical as well as electrical rework. Parameters verified against Renesas Electronics documentation.