NCV8405BDTRKG

The NCV8405BDTRKG is a self-protected low-side power switch in a DPAK (TO-252) tape-and-reel package, built for driving resistive and inductive loads in automotive body and powertrain-adjacent systems. Its MOSFET stage guarantees a minimum 42 V drain-source breakdown (46 V typical) with RDS(on) of 90 mΩ typical and 100 mΩ maximum at VGS = 10 V, so conduction losses stay low without an external sense element. Integrated protection does the work a discrete MOSFET cannot: current limiting at 9 A typical, a thermal shutdown threshold in the 165 °C to 185 °C band with hysteresis and automatic restart, and 4 kV HBM ESD robustness, all qualified to AEC-Q101 for operation from -40 °C to +150 °C junction. For buyers, that integration removes external clamp and protection parts, shrinks the board area per channel and reduces field-failure risk on lamp, solenoid and motor loads. Selection note: choose this protected switch over a bare MOSFET when the load can short or stall; if your design needs high-side drive or current diagnostics instead, look at protected high-side devices rather than reusing this low-side part. Parameters verified against onsemi documentation.