MMBT5551LT1G

MMBT5551LT1G is an onsemi NPN high-voltage amplifier transistor in SOT-23 (TO-236), tape and reel, 3,000 per reel, lead-free (the G suffix) — the surface-mount counterpart of the onsemi 2N5551 also listed on this site, for high-voltage preamplifier stages, level shifters and display drivers. The voltage headroom in a SOT-23 is the selection point: collector-emitter breakdown 160 V, collector-base 180 V and emitter-base 6 V, with 600 mA maximum collector current and 225 mW package dissipation. The gain figures must be read from onsemi's own current table (MMBT5550LT1/D, Rev. 15): hFE is 80 minimum to 250 maximum at IC = 10 mA, VCE = 5 V and TA = 25 °C, and saturation voltage is 0.20 V maximum at IC = 50 mA, IB = 5 mA. Selection advice: the 1 mA row also carries an 80 minimum, but it is a different operating point — do not merge the rows into a single range when you design the bias point. onsemi status wording for this code was not captured for this record, so no status is claimed here — the offered lot is confirmed against your requirement before quotation. Parameters verified against the onsemi MMBT5550LT1/D datasheet (Rev. 15, September 2026), whose ordering table carries this LT1G code.