BSS138K

2N7002LT1G is an onsemi N-channel small-signal MOSFET in SOT-23, tape and reel — for general-purpose switching: relay drivers, LED strings and logic-level load switches. 60 V, 115 mA in a tiny SOT-23 is the selection point: the jelly-bean FET for low-power switching everywhere on the board. Selection advice: the T1G suffix denotes tape and reel with lead-free finish; onsemi lists this part as Active. Against the BSS138LT1G on this site (50 V, 200 mA, 3.5 Ω logic-level): the 2N7002 handles slightly higher voltage but needs more gate drive (7.5 Ω at 10 V) — for 3.3 V logic-level switching the BSS138 is the better pick, while the 2N7002 suits relay coils and LED strings on higher-voltage rails such as 24 V industrial. 225 mW package dissipation sets the ceiling; size the load accordingly. Parameters verified against distributor and manufacturer documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

BSS138LT1G is an onsemi N-channel small-signal MOSFET in SOT-23, tape and reel — for level shifting and load switching in space-constrained designs. 50 V, 200 mA with logic-level gate (1.5 V max threshold) is the selection point: it switches cleanly from 3.3 V and 5 V logic with no gate driver. Selection advice: the T1G suffix denotes tape and reel with lead-free finish. This is the classic bidirectional I2C level-shifter FET — one BSS138 plus two pull-ups per line translates between voltage domains. Against the 2N7002LT1G on this site (60 V, 115 mA, 7.5 Ω): the BSS138 offers lower Rds(on) at 3.5 Ω and higher current for switching loads; the 2N7002 suits slightly higher voltage at lower current. At 200 mA the 3.5 Ω drop dissipates about 0.14 W — inside the 225 mW package budget, but leave margin. For power switching, step up to a larger MOSFET. Parameters verified against distributor and manufacturer documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

2N7002,235 is Nexperia’s SOT-23 (TO-236AB) version of the classic 2N7002 N-channel MOSFET — 60 V / 300 mA — for small-signal switching, level shifting and load switching on space-constrained boards. The ‘,235’ suffix is Nexperia’s tape-and-reel packing code (3,000 per reel), not a different electrical part: ordering 2N7002,215 gets cut tape of the same die. Selection advice: the 5 Ω RDS(on) is high by modern standards, so keep continuous current well under the 300 mA headline rating to avoid I²R heating; for lower drop in the same footprint consider 2N7002P (1.6 Ω) or BSS138. VGS(th) is 2.5 V maximum, which 3.3 V logic can drive — but only marginally across temperature — so use a 5 V gate rail or a true logic-level part when the MCU supply is 3.3 V and the temperature range is wide. Active status through distribution; match the reel quantity to your run size before quoting. Parameters trace to the manufacturer datasheet; state quantity, packing and date-code requirements in your RFQ — we reconfirm the offered lot before quotation and reply within 24 hours.

AO3400 is an Alpha & Omega Semiconductor N-channel MOSFET in SOT-23 — VDS 30 V, continuous drain current 5.8 A, RDS(on) 28 mΩ at 10 V, gate charge 7 nC. The low on-resistance in SOT-23 is the selection point: 5.8 A switching from a 3-pin package the size of a grain of rice — the default MOSFET for load switches, battery protection and DC-DC in space-constrained designs. Selection advice: lifecycle warning — AOS lists the AO3400 as Obsolete (EOL) with the AOSS32334C as recommended replacement; for repairs and legacy builds we source remaining distributor stock, and for new designs qualify the AOSS32334C or another current-production SOT-23 MOSFET. Note the ±12 V gate limit — drive it from logic levels, not 15 V gate drivers. Evidence: DigiKey confirms Obsolete status; AOS data confirms 30 V, 5.8 A, 28 mΩ, SOT-23 and the AOSS32334C replacement. Match the full AO3400 code. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

AO3400A is a low-voltage N-channel MOSFET from Alpha & Omega Semiconductor in a SOT-23 package, for load switching and power management in space-constrained circuits — battery protection, load gates and DC-DC converter switches. Its advantage is low on-resistance in the tiny SOT-23 footprint, which keeps conduction losses and board area minimal at logic-level drive. Selection advice: the A suffix denotes this package and configuration revision — match the full AO3400A code, since AOSMD parts have neighboring codes with different ratings. Verify your switched voltage and current against the datasheet maximums with thermal margin, and confirm the gate-drive level your controller provides. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRF3205PBF is an Infineon HEXFET N-channel power MOSFET in TO-220AB, tube — for high-current switching: motor drives, inverters, DC-DC stages and battery protection where tens of amps must switch efficiently. 55 V, 110 A with 8 mΩ Rds(on) is the selection point: extremely low conduction loss at high current. Selection advice: the PBF suffix denotes the lead-free finish. The 110 A rating is specified at 25 °C case temperature — in practice the TO-220 package and your heatsink set the real continuous current, so thermal design decides what you can actually run. Fully avalanche rated with fast switching and ±20 V gate drive. The 146 nC gate charge needs a capable gate driver for fast switching — do not drive the gate directly from a weak MCU pin at high frequency. For logic-level drive from 3.3 V or 5 V MCUs, pick a logic-level MOSFET instead — this part needs 10 V gate drive for full enhancement. Parameters verified against distributor and manufacturer documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRFZ44NSTRLPBF is an Infineon N-channel power MOSFET — 55 V, 49 A, RDS(on) 17.5 mΩ at 10 V, D2PAK (TO-263) package, tape and reel. The 49 A / 17.5 mΩ combination is the selection point: a classic high-current switch for motor drives, DC-DC and load switching — one of the most second-sourced power MOSFETs ever made. Selection advice: lifecycle note — Infineon marks this part Not for new design; for new designs qualify a current-generation MOSFET, and for repairs and legacy builds we source remaining stock — the IRFZ44N is multi-sourced, so confirm the manufacturer on the offered lot. The STRLPBF suffix denotes D2PAK on tape and reel — match it to your assembly process, since tube and reel codes differ. Evidence: Infineon data confirms orderable code, 55 V, 49 A, 17.5 mΩ, D2PAK, tape and reel, NFND status. Match the full IRFZ44NSTRLPBF code. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

STP55NF06L is an STMicroelectronics 60 V N-channel power MOSFET in TO-220, tube — for switching applications: motor drives, DC-DC stages and load switches needing tens of amps. 55 A with 18 milliohm Rds(on) is the selection point: low conduction loss in a through-hole package that is easy to heatsink. Selection advice: the L suffix denotes logic-level gate drive — it reaches rated Rds(on) at 5 V Vgs as well as 10 V, so a 5 V MCU rail can drive it where standard MOSFETs need 10 V. 100 percent avalanche tested with −55 °C to +175 °C junction range. ST lists this part as Active through distribution. Parameters verified against ST documentation and distributor listings. State quantity and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

MACOM Technology Solutions XF1001-SC-0G0T is a 1 W heterojunction FET (HFET) covering DC to 6 GHz in an industry-standard SOT-89 package, tape-and-reel packing. With 15.5 dB gain at 1.9 GHz, 30 dBm P1dB and 46.5 dBm output IP3 at 8 V / 300 mA bias (per the MACOM datasheet), it gives wireless infrastructure and aerospace/defense drivers high linearity headroom, so adjacent-channel distortion stays low and system margins hold at full power. The single-ended SOT-89 footprint with exposed ground pad simplifies thermal and matching design versus ceramic packaged parts, shortening RF board spins. Selection advice: 0G0T is the tape-and-reel order code (0G00 is bulk); bring it up first on the XF1001-SC-EV1 or EV2 evaluation boards at 5.8 or 1.9 GHz to validate matching before committing layout. Featured on hqew.com yesterday-hot list (2026-10-13). Parameters verified against MACOM Technology Solutions documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

FAN3224TMX is an onsemi dual-channel low-side MOSFET gate driver in SOIC-8, reel 2500 — for driving power MOSFETs in SMPS and motor drives. Dual 5 A source/sink with 12/9 ns rise/fall is the selection point: balanced dual-channel drive in a standard package. Selection advice: the TMX suffix denotes SOIC-8 in production reel 2500 — the dual-channel pick where two MOSFETs need synchronized drive; for single-channel brute-force drive, the NCP81074ADR2G is the sibling. VCC up to 18 V. onsemi lists this part as Active. Parameters verified against the onsemi official product page. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

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