STFW3N150

STFW3N150 is the STMicroelectronics PowerMESH N-channel MOSFET in the fully isolated TO-3PF package, with the code’s own row verified on the maker’s product table. Verified figures: drain-source voltage of 1500 V, drain current of 2.5 A, on-state resistance of 9 Ω maximum (6 Ω typical), total power dissipation of 63 W in this TO-3PF variant, package isolation voltage of 3.5 kV, and a longevity commitment of 7 years recorded against this code. The lifecycle position is stated on the evidence captured: the maker’s product table for this code shows it in production — read on the maker’s Japanese-language product page, which carries the same table as the English page (whose text fetch was obscured by a download dialog). The selection point is the 1500 V class in an isolated package: offline switchers, lighting ballasts and auxiliary supplies that need kilovolt headroom without an insulating mounting kit. Selection advice: the 63 W figure belongs to the TO-3PF row — the TO-247 sibling STW3N150 in the same family is rated higher, and its dissipation must not be read across to this code. Parameters verified against the STMicroelectronics STFW3N150 product data.