SI2302CDS-T1-GE3

Si2302CDS-T1-GE3 is a Vishay N-channel TrenchFET power MOSFET in a SOT-23 package, rated at 20 V drain-source voltage and 2.9 A drain current with maximum on-resistance of 0.057 Ω at 4.5 V gate drive — a load switch and DC-DC switch for portable and battery-powered equipment. Two warnings govern this part. Lifecycle: Vishay lists this code NRND (not recommended for new designs) — it remains the correct buy for sustaining qualified production, but new designs should be pointed at a current Vishay alternative. Gate rating: the gate-source voltage limit is ±8 V maximum, lower than the ±20 V designers assume for small MOSFETs — never drive this gate from a 12 V driver or a 12 V rail; it is a logic-level part for 2.5 V to 4.5 V drive, and exceeding the gate rating is a silent-killer failure that bench tests at low voltage will not catch. Selection advice: check on-resistance at your actual drive voltage, and state the NRND status acceptance in the RFQ so the offered lot is confirmed against it. Parameters verified against Vishay documentation.