PESD3V3S1BA-N

PESD3V3S1BA-N is an ESD protection diode from BORN in SOD-523, package marking CT, with the full code verified word-for-word in the ordering table of the maker’s own datasheet. Verified figures are BORN’s own: a maximum reverse standoff of 3.3 V, breakdown of 4 V minimum, 5.0 V typical and 6.5 V maximum at 1 mA, reverse leakage of 0.5 µA maximum, clamping of 8 V typical and 11 V maximum at a 10 A peak pulse current, junction capacitance of 18 pF typical and 23 pF maximum, peak pulse power of 110 W, and IEC 61000-4-2 withstand of ±30 kV; the device is bidirectional. The selection point is the smaller SOD-523 body and roughly half the junction capacitance of its SOD-323 sibling in this catalog — a 3.3 V-class protector for space- and capacitance-sensitive lines. Selection advice: as with its sibling, the PESD stem is documented by more than one maker; the figures above are BORN’s own table, and an offer should be checked against the 11 V maximum clamp at 10 A, not a family headline. BORN publishes no per-model lifecycle grading on the sheet used, so none is claimed here. Parameters verified against the BORN PESD3V3S1BA-N datasheet.