IRL3705NPBF

IRL540NPBF is an Infineon logic-level 100 V N-channel power MOSFET in TO-220AB — for MCU-driven power stages: motor drivers, Arduino shields and load switches. Fully enhanced at 5 V gate drive, 36 A continuous drain current, 77 mΩ maximum Rds(on), 1–2 V gate threshold, -55°C to +175°C. Heat evidence: logic-level MOSFETs in sustained demand as designs drive power stages directly from 3.3/5 V logic. Selection advice: the L in IRL540N means logic-level — the key differentiator vs the IRF540N; drive directly from MCU outputs with no gate driver. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRLZ44NPbF is an Infineon logic-level 55 V N-channel power MOSFET in TO-220 — for MCU-driven power stages: Arduino/Raspberry Pi motor drivers, load switches and relay replacements. Fully enhanced at 4.5 V gate drive, 47 A continuous drain current, 22 mΩ maximum Rds(on) at 10 V (35 mΩ at 4.5 V), 1–2 V gate threshold. Heat evidence: logic-level MOSFETs are in sustained demand as more designs drive power stages directly from 3.3/5 V logic — part of the broader Nexperia-alternative sourcing wave. Selection advice: the L in IRLZ44N means logic-level — the key differentiator vs the IRFZ44N; drive it straight from 5 V MCU outputs with no gate driver needed. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRF540NPbF is an Infineon 100 V N-channel power MOSFET in TO-220AB — for motor drives, SMPS and high-current switching: the industry workhorse for 100 V bus designs. 33 A continuous drain current, 44 mΩ maximum Rds(on), 47.3 nC total gate charge, -55°C to +175°C junction range. Heat evidence: Nexperia supply disruption has triggered rush buying of alternative MOSFETs from Infineon, onsemi and ST — the IRF540 is among the most universally stocked power FETs. Selection advice: the PbF suffix is lead-free/RoHS-compliant — same die as the legacy IRF540N, specify PbF for all new builds; for 55 V and lower buses the IRFZ44N cuts conduction losses significantly. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRF540ZPBF is an Infineon StrongIRFET 100 V N-channel power MOSFET in TO-220AB — for automotive and high-efficiency switching: 36 A continuous drain current, 26.5 mΩ maximum Rds(on), optimized gate charge, -55°C to +175°C, AEC-Q101 qualified. Selection advice: the Z in IRF540Z denotes StrongIRFET — lower Rds(on) than the standard IRF540N at a small premium; for cost-sensitive non-automotive use the IRF540N suffices. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRF9540NPBF is an Infineon P-channel 100 V power MOSFET in TO-220AB — for H-bridge high sides, reverse-polarity protection and load switches: -23 A continuous drain current, 117 mΩ maximum Rds(on) at 10 V, 97 nC total gate charge, -55°C to +175°C. Heat evidence: P-channel complement to the IRF540N — high-side switching without charge pumps drives sustained demand. Selection advice: the NPBF suffix is the lead-free TO-220AB — pair with the IRF540N for complementary H-bridge designs; for lower Rds(on) consider the StrongIRFET P-channel series. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IRFZ24NPBF is an Infineon 55 V N-channel power MOSFET in TO-220AB — for mid-power switching: DC-DC converters, motor drives and load switches. 17 A continuous drain current, 70 mΩ maximum Rds(on), 1–2 V gate threshold, -55°C to +175°C. Selection advice: the NPBF suffix is the lead-free TO-220AB — for higher current in the same voltage class step up to the IRFZ44N; for logic-level drive use the IRLZ24N. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

BSS169 is an Infineon N-channel depletion-mode small-signal MOSFET in SOT-23 — for circuits that need a normally-on switch: start-up biasing, load switches that default closed, and protection circuits. Depletion mode is the selection point: unlike enhancement MOSFETs it conducts at zero gate voltage and turns off with negative gate drive — the opposite control logic, which catches out first-time users. Selection advice: verify your gate driver can pull negative before substituting an enhancement part — a BSS138 or 2N7002 will not behave the same here. 100 V, 170 mA, AEC-Q101 qualified per the Infineon datasheet. Availability varies by channel — state quantity and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

The IKW40N120H3 is Infineon's TRENCHSTOP HighSpeed3 1200 V IGBT in TO-247-3, rated 40 A nominal with 160 A pulsed capability and 483 W dissipation, a typical 2.05 V collector-emitter saturation voltage, and an integrated anti-parallel diode. The HighSpeed3 trench technology targets 20–100 kHz switching with low tail current and fast turn-off, which cuts switching losses in solar string inverters, UPS systems, welders and induction heaters compared with standard-speed 1200 V IGBTs. Infineon's official discrete-IGBT portfolio lists the part as a new active product, and it is the exact switch pre-assembled on Infineon's EVAL-1ED3321MC12N gate-driver evaluation board — a practical signal of its reference-design status. Selection advice: choose HighSpeed3 when your stage switches above roughly 20 kHz; for line-frequency or low-kHz motor drives a slower, lower-VCE(sat) IGBT family is usually the cheaper fit. The co-packaged diode makes it a one-part solution for hard-switched half-bridges, so state your switching frequency and topology in the RFQ for a confirmed match. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IPB072N15N3 is an Infineon OptiMOS 3 150V N-channel power MOSFET in TO-263-3 (D2PAK) — for high-power low-voltage motor drives and 48V DC-DC stages: 150V drain-source breakdown, 100A continuous drain current (400A pulsed), 7.2mΩ maximum Rds(on) at 10V, 70nC total gate charge, 300W power dissipation, 0.5K/W junction-to-case thermal resistance, -55°C to +175°C operating range, RoHS compliant. The 7.2mΩ on-resistance keeps conduction losses low at 100A, so high-current stages run cooler and parallel-FET counts can be reduced; the 150V rating fits 48V and 60V buses with comfortable headroom. Business impact: 150V OptiMOS MOSFETs are the workhorse switch for e-mobility and industrial motor drives — an Active, in-stock part on infineon.com with documented FIT reliability data de-risks high-volume power designs. Selection advice: the IPB prefix is the D2PAK (TO-263) SMD variant in tape and reel (ordering code IPB072N15N3GATMA1) — for the through-hole TO-220 version consider the IPP072N15N3; for lower gate charge in the same 150V class consider the OptiMOS 5 generation (IPB073N15N5). Featured on the hqbuy.com recommended list (2026-09-28). Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

IPB107N20N3G is an Infineon OptiMOS 200 V N-channel power MOSFET in TO-263-3 (D2PAK) — for high-current switching: DC-DC converters, motor drives and industrial power. 88 A continuous drain current, 10.7 mΩ maximum Rds(on) at 10 V, 87 nC total gate charge, -55°C to +175°C junction range, 300 W dissipation. Heat evidence: OptiMOS series in sustained demand for EV and industrial power — D2PAK is the preferred SMD package for Nexperia-alternative sourcing. Selection advice: the IPB prefix is the D2PAK variant — the same die ships in TO-220 as IPP110N20N3G; pick D2PAK for automated SMT assembly. Parameters verified against Infineon documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.