HYG090ND06LS1C2

HYG090ND06LS1C2 is an N-channel power MOSFET from HUAYI (Huayi Microelectronics) in a PDFN-8 (5x6) package, verified word-for-word against the maker’s V1.0 datasheet. Verified figures: a 60 V drain-source rating, a continuous drain current of 56 A at a 25 °C case temperature, on-resistance of 8.0 mΩ typical and 9.8 mΩ maximum at a 10 V gate drive, a gate threshold spanning 1 V to 3 V with a 1.9 V typical, and single-pulse avalanche energy of 83 mJ. The selection point is the low on-resistance in the compact 5x6 power-DFN footprint: in a synchronous buck or load-switch stage this grade buys conduction loss down, not silicon area up. Selection advice: reprinted copies of this datasheet circulate with a 7.7 mΩ typical on-resistance that the maker’s V1.0 original does not carry — qualify any offer against the V1.0 figures on this page, not against a reprinted listing. HUAYI publishes no lifecycle grading for the part; the code stands in the maker’s current V1.0 datasheet. Parameters verified against the HUAYI HYG090ND06LS1C2 datasheet (V1.0).