CSD18563Q5A

CSD18563Q5A is a 60 V N-channel NexFET power MOSFET in TI's SON 5x6 (Q5A) package, optimised as the synchronous-rectifier device in 60 V buck converters. RDS(on) is 5.7 mOhm typical and 6.8 mOhm maximum at VGS = 10 V, and 10.8 mOhm maximum at 4.5 V, so it conducts efficiently from both 10 V and logic-level gate drives, cutting conduction loss in high-current rectification. Gate charge is 15 nC typical at 10 V and 7.3 nC at 4.5 V (VDS = 30 V), balancing switching loss against drive requirements, the gate threshold spans 1.7 V to 2.4 V, and junction-to-case thermal resistance is 1.3 C/W for heat extraction through the PCB. Selection advice: TI positions CSD18537NQ5A as the companion control (high-side) FET for this device, so pairing them keeps gate-charge and package behaviour matched in a synchronous buck. When substituting, compare RDS(on) at your actual drive voltage rather than only the 10 V headline figure, and match the full Q5A code to the SON 5x6 footprint. Parameters verified against Texas Instruments documentation.