RTP100E005G1FL

RTP100E005G1FL is a Renesas 100 V enhancement-mode GaN FET in an FCLGA package (3.3 x 3.3 mm) from the Gen I REXGaN platform, with typical RDS(on) of 5 milliohms, 5.2 nC gate charge and 24.2 nC output charge, zero reverse-recovery charge and JEDEC qualification, in a footprint Renesas positions as pin-compatible with silicon MOSFET alternatives. Selection advice: it suits first GaN evaluations on 48 V bus power stages for AI servers and motor drives, where the pin-compatible outline lets the same board compare GaN against the silicon design; Renesas released the family in October 2026 and its product page lists this code as Active, released to market and available for purchase. Parameters verified against Renesas documentation (evaluation board manual R07UZ0003EU).