IXRFD630

IXRFD630 is an IXYS RF CMOS high-speed high-current low-side MOSFET gate driver in DE-series 6-SMD package, tube packing — 30 A peak source/sink output, under 4 ns typical rise and fall times, 8 ns minimum pulse width, 8 V to 18 V supply, TTL/CMOS-compatible input, single channel, rated −40 °C to +85 °C operating. The sub-4-nanosecond edges at 30 A are the selection point: Class D/E RF power stages at 13.56/27.12 MHz and multi-MHz switchers need gate drive this fast or switching losses dominate — ordinary gate drivers with tens-of-nanoseconds edges cannot serve these designs. Selection advice: the IXRFD631 adds a Kelvin input connection and extra decoupling against ground-bounce false triggering, the IXRFD615 is the 15 A version for smaller FETs; per the Farnell-hosted datasheet this part is the direct drop-in replacement for the previous-generation DEIC420. IXYS/Littelfuse does not show an explicit lifecycle status on a product page; RFMW (authorized RF distributor) lists it with Status: Standard and available for ordering. Evidence: the IXYS IXRFD630 official datasheet confirms the ordering code, 30 A peak, <4 ns edges, DE-6 SMD package and tube packing.