IX800FXF2YMS4

IX800FXF2YMS4 is a dual SiC MOSFET power module from Toshiba in the iXPLV package (144 x 99.5 x 40 mm, screw terminals), rated 3300 V and 800 A DC (1600 A pulse) with third-generation SiC chips, 6000 W dissipation capability, 6000 Vrms isolation, a built-in thermistor and current-sense terminals, and a diode surge rating of 300 kA2s. Toshiba's datasheet records the start of commercial production as July 2026. Selection advice: the gate must be driven at +20 V / -6 V (absolute gate rating +25 / -10 V) and the M8 main terminals are specified at 9.1 N.m mounting torque; the datasheet's unintended-use clause excludes automobiles, so position it for rail traction, renewable and industrial power conversion rather than vehicle traction inverters. Parameters verified against the Toshiba datasheet.