DRV8300NRGER

DRV8300NRGER is the N-version code of TI's DRV8300 three-phase brushless-DC gate driver, in a 24-pin VQFN (RGE) package with 3,000-piece large tape-and-reel packing. It shares the family's main ratings: gate-drive supply from 5 V to 20 V, source and sink capability of 750 mA and 1.5 A for fast MOSFET switching, bootstrap nodes tolerant to 125 V and phase nodes to -22 V transients, logic inputs compatible with 3.3 V and 5 V controllers, and operation from -40 °C to +125 °C. The QFN variant adds a DT pin for adjustable dead time and selectable low-side gate polarity, which helps tune cross-conduction margins on different power stages. The defining difference of this N code is what it leaves out: there is no integrated bootstrap diode, so the design must provide an external bootstrap diode and capacitor for each high-side channel. Selection advice: order the N version only when your power stage already places external bootstrap diodes, for example to control reverse-recovery behaviour or to share a proven layout; otherwise the D version, DRV8300DRGER in this catalog, integrates the diodes in the same footprint and removes those components from the BOM. Parameters verified against Texas Instruments documentation.