DRV8300DRGER

DRV8300DRGER is a Texas Instruments 100 V three-phase half-bridge gate driver in a 24-pin VQFN (RGE) 4 x 4 mm package on a 3000-unit large reel — for high-voltage BLDC, PMSM and inverter stages: switch nodes rated to 100 V with bootstrap pins at 125 V absolute maximum and -22 V negative transient tolerance, GVDD supply of 5 V to 20 V, gate drive of 750 mA source and 1.5 A sink peak, 3.3 V/5 V logic inputs and switch-node leakage below 55 µA, over -40°C to +125°C. Two QFN-only controls are the selection point: a DT pin sets the deadtime to the stage instead of a fixed value, and the low-side output polarity is selectable — flexibility the TSSOP code does not offer. The D version integrates the bootstrap diode, so no external bootstrap diode is needed per phase. Business impact: the 4 x 4 mm footprint plus adjustable deadtime suit dense high-voltage layouts where shoot-through margin is tuned per MOSFET choice. Selection advice: keep the D/N letters straight — the DRV8300NRGER shares this RGE package but omits the integrated bootstrap diode and needs an external diode and capacitor; the two are not equivalents. Parameters verified against the TI DRV8300 datasheet.