TIP120

TIP121 is an ST NPN power Darlington transistor in TO-220, tube — for driving motors, relays and solenoids directly from MCU outputs. The Darlington pair is the selection point: minimum DC current gain of 1000, so a few milliamps of base drive switches 5 A loads — no separate driver stage needed. Selection advice: ST lists the TIP121 as Active (in volume production). Its complement is the TIP126 (PNP) — for push-pull stages specify the pair together. Note the Darlington VCE(sat) of ~2 V at full load: at 5 A it dissipates ~10 W, so a heatsink is mandatory, and it is not a low-dropout switch — for efficient switching consider a MOSFET instead. Evidence: ST data confirms Active status, NPN Darlington, TO-220. Match the full TIP121 code — the TIP122 (100 V) and TIP120 (60 V) are different voltage grades. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

TIP122 is an STMicroelectronics NPN silicon power Darlington transistor — 5 A collector current, 100 V collector-emitter voltage, minimum DC current gain of 1000, in TO-220, tube packing, junction temperature to 150 °C. The Darlington gain of 1000 is the selection point: a microcontroller pin can switch multi-ampere loads (DC motors, solenoids, relays, lamps) through a small base resistor, where a single BJT would need far more base drive. Selection advice: Darlington saturation voltage reaches up to 4 V at 5 A — budget that voltage drop and the resulting heat, and fit a heatsink for continuous high-current loads. The PNP complement is the TIP127 for push-pull or H-bridge designs; for lower saturation choose a MOSFET instead. ST lists TIP122 as Active. Evidence: ST TIP122 datasheet and distributor listings confirm 5 A, 100 V, hFE 1000, TO-220 and tube packing. Match the full TIP122 code. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

STP55NF06L is an STMicroelectronics 60 V N-channel power MOSFET in TO-220, tube — for switching applications: motor drives, DC-DC stages and load switches needing tens of amps. 55 A with 18 milliohm Rds(on) is the selection point: low conduction loss in a through-hole package that is easy to heatsink. Selection advice: the L suffix denotes logic-level gate drive — it reaches rated Rds(on) at 5 V Vgs as well as 10 V, so a 5 V MCU rail can drive it where standard MOSFETs need 10 V. 100 percent avalanche tested with −55 °C to +175 °C junction range. ST lists this part as Active through distribution. Parameters verified against ST documentation and distributor listings. State quantity and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

2N3055 is an ST NPN power transistor in TO-3 (TO-204AA) metal-can — VCEO 60 V, continuous collector current 15 A, the classic linear-regulator pass transistor. The TO-3 metal can is the selection point: 115 W dissipation with proper heatsinking — the device that built generations of bench power supplies, suited for audio, power-linear and switching applications. Selection advice: lifecycle warning — ST lists the 2N3055 as obsolete (out of production); for repairs and legacy builds we source remaining distributor stock, and for new designs use a current-production power transistor or MOSFET. Its PNP complement is the MJ2955 — for push-pull or complementary output stages the two are specified as a pair. Evidence: ST data confirms NPN, TO-3, obsolete status. Match the full 2N3055 code on your BOM. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

ST lists BD139 as ACTIVE (in volume production) — an NPN silicon medium-power transistor, SOT-32 (TO-126) plastic package. The TO-126 package is the selection point between small-signal and TO-220 power devices: it handles medium power with a smaller footprint than TO-220, suiting driver stages and low-power audio outputs. Selection advice: the complementary PNP is the BD140 — for push-pull driver stages, source both from the same manufacturer to keep the pair matched. Verify your collector dissipation against the package thermal limits with margin. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

ST lists BD140 as ACTIVE (in volume production) — a PNP silicon power transistor, SOT-32 (TO-126) plastic package. The TO-126 package positions it between small-signal transistors and TO-220 power devices: medium power handling in a compact footprint for driver stages. Selection advice: the complementary NPN is the BD139 — for push-pull stages, pair them from the same manufacturer to keep characteristics matched. Verify collector dissipation against the package thermal limits with margin. Parameters verified against the ST official product page. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

MJ2955 is an ST PNP power transistor in TO-3 (TO-204AA) metal-can — VCEO 60 V, continuous collector current 15 A, the PNP complement of the 2N3055. The complementary pair is the selection point: MJ2955 with 2N3055 forms the classic push-pull output stage for audio amplifiers and complementary linear regulators — one cannot be substituted by the other, they are a matched NPN/PNP pair. Selection advice: lifecycle warning — ST lists the MJ2955 as obsolete (out of production); for repairs and legacy builds we source remaining distributor stock, and for new designs use current-production complementary pairs. In push-pull stages replace both devices together to keep the pair matched. Evidence: ST data confirms PNP, TO-3, obsolete status, complementary to 2N3055. Match the full MJ2955 code on your BOM. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

The SCTW100N120G2AG is STMicroelectronics' 1200 V automotive-grade SiC MOSFET in the HiP247 package, pairing 75 A continuous current with a typical 30 mΩ on-resistance at VGS = 18 V. As an AEC-Q101 qualified Gen 2 device, it combines very fast switching with low gate charge, so designers can push switching frequencies well above silicon IGBT practice and shrink magnetics and heatsinks in the power stage. That translates directly into higher power density for EV traction inverters and on-board chargers, and into lower semiconductor losses for DC fast-charging and high-voltage auxiliary converters. ST's official datasheet and eStore listing confirm the device as Active in the automotive portfolio. Selection advice: its automotive qualification is the key differentiator against industrial-only 1200 V SiC MOSFETs — specify it when the program requires PPAP-grade traceability, and keep the 18 V recommended gate drive in the design from the start, because 15 V drive leaves on-resistance and switching margin on the table. For lower-current nodes in the same system, pairing it with an 80 mΩ-class device such as ROHM's SCT3080KL balances BOM cost. Parameters verified against STMicroelectronics documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

STGP19NC60HD is a STMicroelectronics very fast IGBT in TO-220 — for hard-switching power stages: motor drives, UPS and induction heating. 600 V collector-emitter, 19 A continuous at 100°C (40 A at 25°C), very soft ultra-fast recovery antiparallel diode, PowerMESH technology for the switching/on-state trade-off. Heat evidence: IGBT sourcing is active as Nexperia supply disruption pushes buyers toward ST and Infineon alternatives — ST online store and DigiKey carry stock with 20-week factory lead times reported. Selection advice: the P suffix is TO-220 through-hole — the same die ships as STGB19NC60HDT4 (D²PAK) and STGW19NC60HD (TO-247); match the package to your heatsink layout, the three are not footprint-compatible. Parameters verified against STMicroelectronics datasheet DS4967. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

The STGW40H120DF2 is STMicroelectronics' 1200 V, 40 A high-speed H-series IGBT in TO-247, with a typical 2.1 V VCE(sat) at 40 A, 175 °C maximum junction temperature, 5 µs short-circuit withstand time and a very fast recovery co-packaged antiparallel diode. The H series is engineered as the optimum compromise between conduction and switching loss for high-frequency converters — total switching energy of 2.32 mJ at 25 °C keeps 20–100 kHz photovoltaic inverters, UPS and welding stages efficient, while the slightly positive VCE(sat) temperature coefficient makes parallel operation safe. ST's eStore lists the part as Active with industrial grade and ECOPACK2 compliance. Selection advice: the DF2 suffix denotes the fast-recovery diode co-pack — specify it for hard-switched PFC and boost stages where diode recovery dominates losses; for resonant topologies where the diode barely conducts, ask whether a diode-less variant of the same H-series die would trim the BOM. State the topology and switching frequency in your RFQ so the offered lot is reconfirmed against the right use case. Parameters verified against STMicroelectronics documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.