SCTW100N120G2AG

The NTHL030N120M3S is onsemi's EliteSiC M3S 1200 V SiC MOSFET in TO-247-3L, rated 73 A with a typical 29 mΩ on-resistance at VGS = 18 V and a −55 to +175 °C junction range. The planar M3S technology holds conduction and switching losses down simultaneously, which lets hard-switched boost and inverter stages run cooler and smaller than equivalent silicon superjunction designs. For buyers that means fewer parallel devices to reach a target power level, simpler thermal management, and efficiency headroom that survives hot ambient conditions in solar, storage and EV-charging cabinets. The official onsemi datasheet (NTHL030N120M3S/D) documents these ratings, and the part is listed Active through franchised distribution. Selection advice: at 29 mΩ this sits in the sweet spot for 3–10 kW single-phase and three-phase stages — stepping up to a higher on-resistance class cuts unit cost but raises conduction loss, so state your target efficiency and switching frequency in the RFQ and we will confirm the lot's fit. If your layout switches above 100 kHz with high di/dt, ask about Kelvin-source package options in the same family before locking the PCB. Parameters verified against onsemi documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

The SCT3080KL is ROHM's 3rd-generation trench-structure 1200 V SiC MOSFET in TO-247N: 31 A continuous at Tc = 25 °C (22 A at 100 °C), 80 mΩ typical on-resistance at VGS = 18 V, 165 W dissipation and a 175 °C maximum junction temperature. The trench architecture gives low on-resistance per die area with fast switching and fast reverse recovery, so compact 1–3 kW auxiliary supplies, solar micro-inverters and motor-drive front ends can drop in SiC without redesigning the magnetic set around a superjunction part. ROHM's product page backs it with an 8-year longevity program, which matters for industrial programs that must guarantee spares across a long production run. Selection advice: the recommended 0/+18 V drive is non-negotiable — driving it at 15 V forfeits a meaningful share of its on-state performance, so include a proper +18 V gate driver in the BOM rather than reusing a legacy IGBT driver. Against 30 mΩ-class parts it is the economical choice for mid-power nodes where conduction loss is not the binding constraint. Parameters verified against ROHM documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

2N3055 is an ST NPN power transistor in TO-3 (TO-204AA) metal-can — VCEO 60 V, continuous collector current 15 A, the classic linear-regulator pass transistor. The TO-3 metal can is the selection point: 115 W dissipation with proper heatsinking — the device that built generations of bench power supplies, suited for audio, power-linear and switching applications. Selection advice: lifecycle warning — ST lists the 2N3055 as obsolete (out of production); for repairs and legacy builds we source remaining distributor stock, and for new designs use a current-production power transistor or MOSFET. Its PNP complement is the MJ2955 — for push-pull or complementary output stages the two are specified as a pair. Evidence: ST data confirms NPN, TO-3, obsolete status. Match the full 2N3055 code on your BOM. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

ST lists BD139 as ACTIVE (in volume production) — an NPN silicon medium-power transistor, SOT-32 (TO-126) plastic package. The TO-126 package is the selection point between small-signal and TO-220 power devices: it handles medium power with a smaller footprint than TO-220, suiting driver stages and low-power audio outputs. Selection advice: the complementary PNP is the BD140 — for push-pull driver stages, source both from the same manufacturer to keep the pair matched. Verify your collector dissipation against the package thermal limits with margin. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

ST lists BD140 as ACTIVE (in volume production) — a PNP silicon power transistor, SOT-32 (TO-126) plastic package. The TO-126 package positions it between small-signal transistors and TO-220 power devices: medium power handling in a compact footprint for driver stages. Selection advice: the complementary NPN is the BD139 — for push-pull stages, pair them from the same manufacturer to keep characteristics matched. Verify collector dissipation against the package thermal limits with margin. Parameters verified against the ST official product page. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

MJ2955 is an ST PNP power transistor in TO-3 (TO-204AA) metal-can — VCEO 60 V, continuous collector current 15 A, the PNP complement of the 2N3055. The complementary pair is the selection point: MJ2955 with 2N3055 forms the classic push-pull output stage for audio amplifiers and complementary linear regulators — one cannot be substituted by the other, they are a matched NPN/PNP pair. Selection advice: lifecycle warning — ST lists the MJ2955 as obsolete (out of production); for repairs and legacy builds we source remaining distributor stock, and for new designs use current-production complementary pairs. In push-pull stages replace both devices together to keep the pair matched. Evidence: ST data confirms PNP, TO-3, obsolete status, complementary to 2N3055. Match the full MJ2955 code on your BOM. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

STGP19NC60HD is a STMicroelectronics very fast IGBT in TO-220 — for hard-switching power stages: motor drives, UPS and induction heating. 600 V collector-emitter, 19 A continuous at 100°C (40 A at 25°C), very soft ultra-fast recovery antiparallel diode, PowerMESH technology for the switching/on-state trade-off. Heat evidence: IGBT sourcing is active as Nexperia supply disruption pushes buyers toward ST and Infineon alternatives — ST online store and DigiKey carry stock with 20-week factory lead times reported. Selection advice: the P suffix is TO-220 through-hole — the same die ships as STGB19NC60HDT4 (D²PAK) and STGW19NC60HD (TO-247); match the package to your heatsink layout, the three are not footprint-compatible. Parameters verified against STMicroelectronics datasheet DS4967. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

The STGW40H120DF2 is STMicroelectronics' 1200 V, 40 A high-speed H-series IGBT in TO-247, with a typical 2.1 V VCE(sat) at 40 A, 175 °C maximum junction temperature, 5 µs short-circuit withstand time and a very fast recovery co-packaged antiparallel diode. The H series is engineered as the optimum compromise between conduction and switching loss for high-frequency converters — total switching energy of 2.32 mJ at 25 °C keeps 20–100 kHz photovoltaic inverters, UPS and welding stages efficient, while the slightly positive VCE(sat) temperature coefficient makes parallel operation safe. ST's eStore lists the part as Active with industrial grade and ECOPACK2 compliance. Selection advice: the DF2 suffix denotes the fast-recovery diode co-pack — specify it for hard-switched PFC and boost stages where diode recovery dominates losses; for resonant topologies where the diode barely conducts, ask whether a diode-less variant of the same H-series die would trim the BOM. State the topology and switching frequency in your RFQ so the offered lot is reconfirmed against the right use case. Parameters verified against STMicroelectronics documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

STP16NF06 is an ST N-channel power MOSFET — 60 V, 16 A, RDS(on) 0.08 Ω, TO-220, STripFET II technology. The 60 V / TO-220 combination is the selection point: a workhorse switch for 24–48 V motor drives, DC-DC and load switching — through-hole for easy heatsinking. Selection advice: ST lists the STP16NF06 as Active. At 16 A the 0.08 Ω on-resistance dissipates over 20 W — a heatsink is mandatory, and verify the thermal design against the RthJC. For lower loss in the same footprint consider a newer-generation 60 V MOSFET; for SMD assembly the STD16NF06 (DPAK) is the surface-mount sibling. Evidence: ST data confirms Active, 60 V, 16 A, 0.08 Ω, TO-220, STripFET II. Match the full STP16NF06 code. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

STP36NF06L is an STMicroelectronics 60 V N-channel STripFET II power MOSFET in TO-220 — for 12/24 V rails, motor control and power switching: 100% avalanche tested. 30 A continuous drain current, 32 mΩ typical Rds(on), -55°C to +175°C junction range, Ecopack2 RoHS compliant. Heat evidence: automotive MOSFETs are on allocation watch as vehicle makers dual-source away from disrupted suppliers — AEC-Q101 parts with stable supply are prioritized. Selection advice: the L suffix denotes logic-level-friendly gate threshold (2.5 V max) — vs the IRF540N it offers tighter Rds(on) for 12/24 V systems; confirm your gate drive can deliver the required current for fast switching. Parameters verified against STMicroelectronics documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.