BD140

MJ2955 is an ST PNP power transistor in TO-3 (TO-204AA) metal-can — VCEO 60 V, continuous collector current 15 A, the PNP complement of the 2N3055. The complementary pair is the selection point: MJ2955 with 2N3055 forms the classic push-pull output stage for audio amplifiers and complementary linear regulators — one cannot be substituted by the other, they are a matched NPN/PNP pair. Selection advice: lifecycle warning — ST lists the MJ2955 as obsolete (out of production); for repairs and legacy builds we source remaining distributor stock, and for new designs use current-production complementary pairs. In push-pull stages replace both devices together to keep the pair matched. Evidence: ST data confirms PNP, TO-3, obsolete status, complementary to 2N3055. Match the full MJ2955 code on your BOM. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

ST lists TIP32C as ACTIVE (in volume production) — a silicon epitaxial-base PNP power transistor, TO-220 package, whose complementary NPN is the TIP31C. The C voltage grade is the selection point: the TIP32 family spans grades with different voltage ratings in the same TO-220 package, so match the full TIP32C code — a lower-grade sibling is visually identical. Selection advice: for push-pull output stages, pair with the TIP31C from the same manufacturer to keep the complementary pair matched. Verify collector voltage and current against the C-grade ratings with thermal margin, and plan heatsinking. Parameters verified against the ST official product page. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

TIP42C is STMicroelectronics’ 100 V PNP power transistor in TO-220 — 6 A continuous, 65 W with a heatsink — the exact PNP complement to the TIP41C, for push-pull audio output stages, H-bridge high sides, and PNP series regulators. The ‘C’ suffix is the 100 V grade (TIP42 40 V / A 60 V / B 80 V / C 100 V): same current and package across grades, so match the grade to your rail voltage. Selection advice: pair with TIP41C (same 100 V / 6 A / TO-220, in this catalog) for complementary designs — but keep both halves in the same manufacturer family, since hFE spreads (15–75) differ between vendors and unmatched pairs distort. The 65 W rating needs a real heatsink; a bare TO-220 in still air is good for roughly 2 W. VCE(sat) reaches 1.5 V at 6 A, so budget the conduction loss in efficiency-sensitive designs. Active, stocked in tube packing. Parameters trace to the manufacturer datasheet; state quantity, packing and date-code requirements in your RFQ — we reconfirm the offered lot before quotation and reply within 24 hours.

BCP53-16TX is a Nexperia 80V, 1A PNP medium-power transistor — for linear regulators, high-side switches and power management: SOT223 (SC-73) SMD package, 650mW total power dissipation, hFE 100 to 250 gain selection, 150C maximum junction temperature, AEC-Q101 qualified. The SOT223 package delivers 1A switching capability in a surface-mount footprint, so designs gain through-hole-class current handling without hand assembly; the -16 gain bin (100-250) suits driver stages where predictable gain matters more than maximum beta. Business impact: medium-power PNPs are the workhorse of discrete power design — linear regulator pass elements, relay drivers and load switches all standardize on this footprint, so multi-sourcing is straightforward and pricing stays competitive. Selection advice: the -16 suffix selects the 100-250 hFE bin — for wider tolerance use the base BCP53 (63-250); the TX code denotes the standard packing — for automotive PPAP flows specify the -Q variant. Ranked #5 on the hqbuy.com real-time hot list (2026-10-05). Parameters verified against Nexperia documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

ST lists BD139 as ACTIVE (in volume production) — an NPN silicon medium-power transistor, SOT-32 (TO-126) plastic package. The TO-126 package is the selection point between small-signal and TO-220 power devices: it handles medium power with a smaller footprint than TO-220, suiting driver stages and low-power audio outputs. Selection advice: the complementary PNP is the BD140 — for push-pull driver stages, source both from the same manufacturer to keep the pair matched. Verify your collector dissipation against the package thermal limits with margin. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

2N3055 is an ST NPN power transistor in TO-3 (TO-204AA) metal-can — VCEO 60 V, continuous collector current 15 A, the classic linear-regulator pass transistor. The TO-3 metal can is the selection point: 115 W dissipation with proper heatsinking — the device that built generations of bench power supplies, suited for audio, power-linear and switching applications. Selection advice: lifecycle warning — ST lists the 2N3055 as obsolete (out of production); for repairs and legacy builds we source remaining distributor stock, and for new designs use a current-production power transistor or MOSFET. Its PNP complement is the MJ2955 — for push-pull or complementary output stages the two are specified as a pair. Evidence: ST data confirms NPN, TO-3, obsolete status. Match the full 2N3055 code on your BOM. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

The SCTW100N120G2AG is STMicroelectronics' 1200 V automotive-grade SiC MOSFET in the HiP247 package, pairing 75 A continuous current with a typical 30 mΩ on-resistance at VGS = 18 V. As an AEC-Q101 qualified Gen 2 device, it combines very fast switching with low gate charge, so designers can push switching frequencies well above silicon IGBT practice and shrink magnetics and heatsinks in the power stage. That translates directly into higher power density for EV traction inverters and on-board chargers, and into lower semiconductor losses for DC fast-charging and high-voltage auxiliary converters. ST's official datasheet and eStore listing confirm the device as Active in the automotive portfolio. Selection advice: its automotive qualification is the key differentiator against industrial-only 1200 V SiC MOSFETs — specify it when the program requires PPAP-grade traceability, and keep the 18 V recommended gate drive in the design from the start, because 15 V drive leaves on-resistance and switching margin on the table. For lower-current nodes in the same system, pairing it with an 80 mΩ-class device such as ROHM's SCT3080KL balances BOM cost. Parameters verified against STMicroelectronics documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

STGP19NC60HD is a STMicroelectronics very fast IGBT in TO-220 — for hard-switching power stages: motor drives, UPS and induction heating. 600 V collector-emitter, 19 A continuous at 100°C (40 A at 25°C), very soft ultra-fast recovery antiparallel diode, PowerMESH technology for the switching/on-state trade-off. Heat evidence: IGBT sourcing is active as Nexperia supply disruption pushes buyers toward ST and Infineon alternatives — ST online store and DigiKey carry stock with 20-week factory lead times reported. Selection advice: the P suffix is TO-220 through-hole — the same die ships as STGB19NC60HDT4 (D²PAK) and STGW19NC60HD (TO-247); match the package to your heatsink layout, the three are not footprint-compatible. Parameters verified against STMicroelectronics datasheet DS4967. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

The STGW40H120DF2 is STMicroelectronics' 1200 V, 40 A high-speed H-series IGBT in TO-247, with a typical 2.1 V VCE(sat) at 40 A, 175 °C maximum junction temperature, 5 µs short-circuit withstand time and a very fast recovery co-packaged antiparallel diode. The H series is engineered as the optimum compromise between conduction and switching loss for high-frequency converters — total switching energy of 2.32 mJ at 25 °C keeps 20–100 kHz photovoltaic inverters, UPS and welding stages efficient, while the slightly positive VCE(sat) temperature coefficient makes parallel operation safe. ST's eStore lists the part as Active with industrial grade and ECOPACK2 compliance. Selection advice: the DF2 suffix denotes the fast-recovery diode co-pack — specify it for hard-switched PFC and boost stages where diode recovery dominates losses; for resonant topologies where the diode barely conducts, ask whether a diode-less variant of the same H-series die would trim the BOM. State the topology and switching frequency in your RFQ so the offered lot is reconfirmed against the right use case. Parameters verified against STMicroelectronics documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

STP16NF06 is an ST N-channel power MOSFET — 60 V, 16 A, RDS(on) 0.08 Ω, TO-220, STripFET II technology. The 60 V / TO-220 combination is the selection point: a workhorse switch for 24–48 V motor drives, DC-DC and load switching — through-hole for easy heatsinking. Selection advice: ST lists the STP16NF06 as Active. At 16 A the 0.08 Ω on-resistance dissipates over 20 W — a heatsink is mandatory, and verify the thermal design against the RthJC. For lower loss in the same footprint consider a newer-generation 60 V MOSFET; for SMD assembly the STD16NF06 (DPAK) is the surface-mount sibling. Evidence: ST data confirms Active, 60 V, 16 A, 0.08 Ω, TO-220, STripFET II. Match the full STP16NF06 code. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.