NTHL030N120M3S

The SCT3080KL is ROHM's 3rd-generation trench-structure 1200 V SiC MOSFET in TO-247N: 31 A continuous at Tc = 25 °C (22 A at 100 °C), 80 mΩ typical on-resistance at VGS = 18 V, 165 W dissipation and a 175 °C maximum junction temperature. The trench architecture gives low on-resistance per die area with fast switching and fast reverse recovery, so compact 1–3 kW auxiliary supplies, solar micro-inverters and motor-drive front ends can drop in SiC without redesigning the magnetic set around a superjunction part. ROHM's product page backs it with an 8-year longevity program, which matters for industrial programs that must guarantee spares across a long production run. Selection advice: the recommended 0/+18 V drive is non-negotiable — driving it at 15 V forfeits a meaningful share of its on-state performance, so include a proper +18 V gate driver in the BOM rather than reusing a legacy IGBT driver. Against 30 mΩ-class parts it is the economical choice for mid-power nodes where conduction loss is not the binding constraint. Parameters verified against ROHM documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

The SCTW100N120G2AG is STMicroelectronics' 1200 V automotive-grade SiC MOSFET in the HiP247 package, pairing 75 A continuous current with a typical 30 mΩ on-resistance at VGS = 18 V. As an AEC-Q101 qualified Gen 2 device, it combines very fast switching with low gate charge, so designers can push switching frequencies well above silicon IGBT practice and shrink magnetics and heatsinks in the power stage. That translates directly into higher power density for EV traction inverters and on-board chargers, and into lower semiconductor losses for DC fast-charging and high-voltage auxiliary converters. ST's official datasheet and eStore listing confirm the device as Active in the automotive portfolio. Selection advice: its automotive qualification is the key differentiator against industrial-only 1200 V SiC MOSFETs — specify it when the program requires PPAP-grade traceability, and keep the 18 V recommended gate drive in the design from the start, because 15 V drive leaves on-resistance and switching margin on the table. For lower-current nodes in the same system, pairing it with an 80 mΩ-class device such as ROHM's SCT3080KL balances BOM cost. Parameters verified against STMicroelectronics documentation. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

1N4001 is an onsemi standard rectifier diode — VRRM 50 V, 1 A average rectified current, DO-41 axial package. The 1N400x family is the selection point: the cheapest diode on earth for mains-frequency rectification and reverse-polarity protection — a jellybean part every lab stocks by the thousand. Selection advice: the 1N4001 is the 50 V bottom grade of the 1N4001–1N4007 family (50 V to 1000 V, same DO-41 package) — for mains work always specify the 1N4007 (1000 V); the 1N4001 suits low-voltage rails only. For switching supplies above a few kHz use a fast-recovery type instead — standard recovery overheats at high frequency. onsemi lists the 1N4001 as Active. Evidence: distributor data confirms onsemi 1N4001 Active, 50 V, 1 A, DO-41. Match the full 1N4001 code — siblings look identical. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

1N4148 is the industry-standard high-speed switching diode — 100 V repetitive reverse voltage, 200 mA average forward current, 4 ns reverse recovery — in a DO-35 axial glass package. The 4 ns trr is the selection point: fast enough for megahertz switching, clamping and reverse-polarity steering in signal paths, where a 1N4007’s microsecond-scale recovery would distort or overheat. Selection advice: the bare 1N4148 code is the base part — onsemi ships it as 1N4148-T50A (ammo pack) or 1N4148-T50R (reel), so quote the suffixed code to get the right packing. For SMD boards the electrical equivalents are LL4148 (SOD-80) and 1N4148W (SOD-123), the same die in surface-mount packages. 1N914 is the older JEDEC number most vendors treat as interchangeable, but 1N4148’s leakage specification is tighter — stay with 1N4148 for precision clamping. Active through distribution. Parameters trace to the manufacturer datasheet; state quantity, packing and date-code requirements in your RFQ — we reconfirm the offered lot before quotation and reply within 24 hours.

1N4733A is an onsemi 5.1 V Zener diode, 1 W maximum power dissipation, axial-lead DO-41 (DO-204AL) package — 5.1 V nominal Zener voltage at 49 mA test current, 7 Ω maximum Zener impedance, 10 µA maximum reverse leakage at 1 V, temperature coefficient −0.01 to +0.04 %/°C, color band marking the cathode. The 5.1 V value is the selection point: it is the natural shunt reference and overvoltage clamp for 5 V logic rails — a one-part overvoltage crowbar, reference or transient clamp where a precision IC reference would be overkill. Selection advice: the bare 1N4733A code is the general through-hole form; the -A suffix is ammo pack and -T is tape and reel — match the suffix to your insertion equipment. Note that only the -T50R variant is listed obsolete per PDN PD24582X; the exact code 1N4733A remains Active. onsemi lists 1N4733A as Active. Evidence: onsemi 1N4728A–1N4761A datasheet and distributor listings confirm 5.1 V, 1 W, 49 mA, DO-41 and Active status. Match the full 1N4733A code. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

onsemi lists 1N4742A as Active — a Zener diode, VZ typ 12 V at IZT 21 mA, P max 1 W, axial-lead DO-41 package. The 12 V Zener voltage is the selection point: a simple, robust shunt reference and overvoltage clamp for 12 V rails, gate protection and signal limiting. Selection advice: the 1N47xx family spans 3.3 V to 100 V in the same DO-41 package — a wrong-voltage sibling looks identical, so match the full 1N4742A code. Verify your bias current keeps the diode in breakdown within its 1 W dissipation limit. Parameters verified against the onsemi official product page. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

1N5817 is a JEDEC-registered Schottky rectifier diode — 20 V reverse voltage, 1 A average rectified current, forward drop maximum 0.45 V at 1 A, DO-41 axial package, −65 °C to +125 °C. The low forward drop is the selection point: roughly half the loss of a PN diode at 1 A — the default Schottky for reverse-polarity protection and low-voltage rectification. Selection advice: lifecycle note — onsemi lists its axial 1N5817 variants as Obsolete, but the 1N5817 is a multi-source JEDEC number; for ongoing production specify a current-production 1N5817 from an active manufacturer. Voltage-grade siblings 1N5818 (30 V) and 1N5819 (40 V) share the package — pick the grade that covers your rail with margin, since Schottky leakage rises with voltage and temperature. Evidence: onsemi/Vishay datasheets confirm 20 V, 1 A, 0.45 V VF, DO-41. Match the full order code on your BOM. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

2N2222A is an onsemi NPN silicon small-signal switching transistor — 40 V collector-emitter voltage, 600 mA continuous collector current, DC current gain of 100 to 300 at 150 mA, 250 MHz transition frequency, in TO-92, -55 to +150 °C. The high gain-bandwidth and fast switching are the selection point: the classic general-purpose NPN for signal amplification, fast switching and driver stages in commercial and industrial designs. Selection advice: the PNP complement is the 2N2907A for push-pull pairs; do not confuse the 2N2222 (30 V) with the 2N2222A (40 V) — the A suffix is the higher-voltage grade. The 625 mW dissipation limits continuous high-current use, so size the load or add a driver for power switching. Evidence: onsemi 2N2222A datasheet and distributor listings confirm 40 V, 600 mA, hFE 100-300, 250 MHz and TO-92. Match the full 2N2222A code — the A suffix matters for voltage rating. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

2N3906 is a JEDEC-registered PNP small-signal transistor in TO-92-3 — VCEO minimum 40 V, continuous collector current 0.2 A, hFE 100 to 300, transition frequency minimum 250 MHz, 625 mW dissipation, −55 °C to +150 °C junction. The 2N3906 is the selection point: the default PNP for small-signal switching and amplification — the complement to the 2N3904 NPN — stocked by every distributor for decades. Selection advice: lifecycle note — onsemi lists its 2N3906RLRAG TO-92 variant as Obsolete (last-time buy was 2012), but the 2N3906 is a multi-source JEDEC number; for ongoing production, specify a current-production 2N3906 from an active manufacturer and confirm the exact order code on the BOM rather than the bare JEDEC number. For switching duty check the 70 ns turn-on / 300 ns turn-off times against your frequency. Evidence: DigiKey and distributor data confirm onsemi 2N3906RLRAG Obsolete status and the 40 V / 0.2 A / 250 MHz parameters. Match the full order code on your BOM. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

2N5088 is an onsemi NPN low-noise amplifier transistor — 30 V collector-emitter voltage, 50 mA continuous collector current, DC current gain of 300 to 900, 50 MHz transition frequency, 625 mW dissipation, TO-92 package, -55 to +150 °C. The low-noise 300-900 gain range is the selection point: designed for low-level, low-noise preamplifier stages where the high minimum gain of 300 reduces base-current noise contribution. Selection advice: 2N5088 is the 30 V version — the 2N5089 is the 25 V version of the same family, so match the full 2N5088 code to your voltage requirement. Evidence: onsemi 2N5088/2N5089 datasheet and distributor listings confirm NPN, 30 V, 50 mA, hFE 300-900, 50 MHz and TO-92. Match the full 2N5088 code. State quantity, packing and date-code requirements in your RFQ; we reconfirm the offered lot before quotation and reply within 24 hours.

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